參數(shù)資料
型號(hào)： HS9-82C12RH
廠商： HARRIS SEMICONDUCTOR
元件分類(lèi)： 微控制器/微處理器
英文描述： Radiation Hardened 8-Bit Input/Output Port
中文描述： 8 I/O, PIA-GENERAL PURPOSE, CDFP24
文件頁(yè)數(shù)： 3/8頁(yè)
文件大小： 49K
代理商： HS9-82C12RH
3
Specifications HS-82C12RH
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input, Output or I/O Voltage . . . . . . . . . . . . GND-0.3V to VDD+0.3V
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
SBDIP Package. . . . . . . . . . . . . . . . . . . .
Ceramic Flatpack Package . . . . . . . . . . .
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.91W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18.2mW/C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .13.5mW/C
θ
JA
θ
JC
55
o
C/W
74
o
C/W
14
o
C/W
13
o
C/W
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . +4.75V to +5.25V
Operating Temperature Range. . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0V to +1.0V
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . . . .VDD -1V to VDD
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
High Input Leakage
Current
IIH
VDD = 5.25V, VIN = 0V,
Pin under test = 5.25V
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-
1
μ
A
Low Input Leakage
Current
IIL
VDD = 5.25V, VIN = 5.25V,
Pin under test = 0V
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-1
-
μ
A
Low Output Voltage
VOL
VDD = 5.25V, IOL = 2mA
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-
0.5
V
High Output Voltage
VOH
VDD = 4.75V, IOH = -2mA
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
4.25
-
V
Static Current
SIDD
VDD = 5.25V, VIN = GND
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-
100
μ
A
Functional Tests
FT
VDD = 4.75V and 5.25V,
VIH = VDD-1.0V, VIL = 1.0V
7, 8A, 8B
-55
o
C, +25
o
C,
+125
o
C
-
-
-
NOTE: All devices are guaranteed at worst case limits and over radiation.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
GROUP A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Data to Output Delay
TPD
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
-
105
ns
Write Enable to Output Delay
TWE
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
-
200
ns
Reset to Output Delay
TR
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
-
145
ns
Set to Output Delay
TS
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
-
100
ns
Clear to Output Delay
TC
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
-
135
ns
Output Enable Time
TE
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
-
125
ns
Output Disable Time
TD
9, 10, 11
-55
o
C, +25
o
C, +125
o
C
-
85
ns
NOTE:
1. Output Timings are measured with the following conditions: CL = 100pF, VIH = 3.75V, and VIL = 1.0V
Spec Number
518063
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