參數(shù)資料
型號: HS1-82C12RH
廠商: HARRIS SEMICONDUCTOR
元件分類: 微控制器/微處理器
英文描述: Radiation Hardened 8-Bit Input/Output Port
中文描述: 8 I/O, PIA-GENERAL PURPOSE, CDIP24
文件頁數(shù): 4/8頁
文件大?。?/td> 49K
代理商: HS1-82C12RH
4
Specifications HS-82C12RH
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input Capacitance
CIN
VDD = Open, f = 1MHz, All
measurements referenced to
device ground
T
A
= +25
o
C
-
8
pF
Output Capacitance
COUT
VDD = Open, f = 1MHz, All
measurements referenced to
device ground
T
A
= +25
o
C
-
8
pF
Pulse Width
TPW
VDD = 4.75, VIH = 3.75, VIL = 1.0
9, 10, 11
-55
o
C, +25
o
C,
+125
o
C
-
50
ns
Data Set Up Time
TSET
VDD = 4.75, VIH = 3.75, VIL = 1.0
9, 10, 11
-55
o
C, +25
o
C,
+125
o
C
-
30
ns
Data Hold Time
TH
VDD = 4.75, VIH = 3.75, VIL = 1.0
9, 10, 11
-55
o
C, +25
o
C,
+125
o
C
-
40
ns
NOTE: The parameters listed in Table 3 are controlled via design or process parameters and are not directly tested. These parameters are
characterized upon initial design release and upon design changes which would affect these characteristics.
TABLE 4. POST 100K RAD ELECTRICAL PERFORMANCE CHARACTERISTICS
NOTE:
The Post Irradiation test conditions and limits are the same as those listed in Table 1 and Table 2.
Spec Number
518063
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