參數(shù)資料
型號: HRU0103C
廠商: Renesas Technology Corp.
英文描述: Silicon Schottky Barrier Diode for Rectifying
中文描述: 硅肖特基二極管整頓
文件頁數(shù): 3/6頁
文件大?。?/td> 115K
代理商: HRU0103C
HRU0103C
Rev.1.00, Aug.29.2003, page 3 of 5
Main Characteristics
0
10
Reverse voltage V
R
(V)
20
30
40
50
0
0.2
0.4
0.6
0.8
1.0
0
0.005
0.020
0.015
0.010
0
30
20
40
0.025
Pulse test
Forward voltage V
F
(V)
Fig.1 Forward current vs. Forward voltage
10
–3
10
–2
10
–5
10
–4
1.0
10
–6
10
–1
10
–3
10
–8
10
–5
10
–4
10
–7
10
–6
Fig.2 Reverse current vs. Reverse voltage
R
R
F
F
Ta = 75
°
C
Ta = 25
°
C
Pulse test
Ta = 75
°
C
Ta = 25
°
C
Ta = 50
°
C
t
T
0V
Tj = 125
°
C
D=2/3
D=5/6
sin(
θ
=180
°
)
10
0.030
0.15
0.10
0
R
Fig4.
Reverse
power dissipation vs. Reverse voltage
Reverse voltage V
R
(V)
Fig3. Forward power dissipation vs.
Forward current
Forward current I
F
(A)
F
DC
0.05
0
0.02
0.08
0.12
D=1/6
sin(
θ
=180
°
)
D=1/3
D=1/2
t
T
0A
Tj = 25
°
C
0.04
0.06
0.10
D = —
T
t
D = —
T
t
D=1/2
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