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    • 參數(shù)資料
      型號(hào): HRU0103C
      廠商: Renesas Technology Corp.
      英文描述: Silicon Schottky Barrier Diode for Rectifying
      中文描述: 硅肖特基二極管整頓
      文件頁(yè)數(shù): 2/6頁(yè)
      文件大小: 115K
      代理商: HRU0103C
      HRU0103C
      Rev.1.00, Aug.29.2003, page 2 of 5
      Absolute Maximum Ratings
      (Ta = 25°C)
      Item
      Symbol
      Value
      Unit
      Peak reverse voltage
      V
      RM
      *
      V
      R
      I
      O
      *
      I
      FM
      I
      FSM
      *
      Tj
      1
      30
      V
      Reverse voltage
      30
      V
      Average rectified current
      1
      100
      mA
      Peak forward surge current
      300
      mA
      Non-Repetitive peak forward surge current
      2
      1
      A
      Junction temperature
      125
      °C
      Storage temperature
      Tstg
      –55 to +125
      °C
      Notes: 1. See from Fig.3 to Fig.5.
      2. 10 ms sine wave 1 pulse.
      Electrical Characteristics
      (Ta = 25°C)
      Item
      Symbol
      Min
      Typ
      Max
      Unit
      Test Condition
      V
      F1
      V
      F2
      I
      R1
      I
      R2
      C
      0.4
      I
      F
      = 10 mA
      I
      F
      = 100 mA
      V
      R
      = 5 V
      V
      R
      = 10 V
      V
      R
      = 0.5 V, f = 1 MHz
      Polyimide board *
      Forward voltage
      0.6
      V
      0.1
      Reverse current
      0.2
      μ
      A
      Capacitance
      8.0
      pF
      Thermal resistance
      Note:
      1. Polyimide board
      Rth(j-a)
      600
      °
      C/W
      1
      Unit: mm
      3
      0
      1.5
      20h
      ×
      15w
      ×
      0.8t
      1.5
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