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參數(shù)資料
| 型號： | HPA251R-3 |
| 英文描述： | TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 25A I(C) |
| 中文描述： | 晶體管|晶體管|叩| 800V的五（巴西）總裁|第25A一（c） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 95K |
| 代理商： | HPA251R-3 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Ordering number:ENN5033
HPA251R
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82599TH (KT)/31495MO (KOTO) BX-1462 No.5033–1/4
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2111A
[HPA251R]
Features
· High speed (t
f
typ=100ns).
· High breakdown voltage (V
CBO
=1500V).
· High-speed damper diode placed in one package
(t
fr
=0.2
μ
s max).
· Adoption of MBIT process.
· High reliability (adoption of HVP process).
C
C
Electrical Characteristics
at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3JML
Continued on next page.
PW
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