參數(shù)資料
型號: HN58X2416NIR
元件分類: DRAM
英文描述: EEPROM
中文描述: EEPROM的
文件頁數(shù): 18/20頁
文件大小: 59K
代理商: HN58X2416NIR
HN58X2408/HN58X2416/HN58X2432/HN58X2464FPIAG
18
Notes
Data Protection at V
CC
On/Off
When V
CC
is turned on or off, noise on the SCL and SDA inputs generated by external circuits (CPU, etc)
may act as a trigger and turn the EEPROM to unintentional program mode. To prevent this unintentional
programming, this EEPROM have a power on reset function. Be careful of the notices described below in
order for the power on reset function to operate correctly.
SCL and SDA should be fixed to V
CC
or V
SS
during V
CC
on/off. Low to high or high to low transition
during V
CC
on/off may cause the trigger for the unintentional programming.
V
CC
should be turned off after the EEPROM is placed in a standby state.
V
CC
should be turned on from the ground level(V
SS
) in order for the EEPROM not to enter the
unintentional programming mode.
V
CC
turn on speed should be longer than 10 us.
Write/Erase Endurance and Data Retention Time
The endurance is 10
5
cycles in case of page programming and 10
4
cycles in case of byte programming (1%
cumulative failure rate). The data retention time is more than 10 years when a device is page-programmed
less than 10
4
cycles.
Noise Suppression Time
This EEPROM have a noise suppression function at SCL and SDA inputs, that cut noise of width less than
50 ns. Be careful not to allow noise of width more than 50 ns.
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HN58X2432FPIAG EEPROM
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