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參數(shù)資料
| 型號(hào)： | HN58C257AT-10 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
| 中文描述： | 256k的EEPROM（32 KWord的× 8位）就緒/忙和RES功能（HN58C257A） |
| 文件頁(yè)數(shù)： | 7/25頁(yè) |
| 文件大?。?/td> | 126K |
| 代理商： | HN58C257AT-10 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)當(dāng)前第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)
HN58C256A Series, HN58C257A Series
7
Write Cycle
Parameter
Symbol
Min*
3
Typ
Max
Unit
Test conditions
Address setup time
t
AS
t
AH
t
CS
t
CH
t
WS
t
WH
t
OES
t
OEH
t
DS
t
DH
t
WP
t
CW
t
DL
t
BLC
t
BL
t
WC
t
DB
t
DW
t
RP
t
RES
0
—
—
ns
Address hold time
CE
to write setup time (
WE
controlled)
CE
hold time (
WE
controlled)
WE
to write setup time (
CE
controlled)
WE
hold time (
CE
controlled)
OE
to write setup time
OE
hold time
50
—
—
ns
0
—
—
ns
0
—
—
ns
0
—
—
ns
0
—
—
ns
0
—
—
ns
0
—
—
ns
Data setup time
50
—
—
ns
Data hold time
WE
pulse width (
WE
controlled)
CE
pulse width (
CE
controlled)
0
—
—
ns
100
—
—
ns
100
—
—
ns
Data latch time
50
—
—
ns
Byte load cycle
0.2
—
30
μ
s
μ
s
Byte load window
100
—
—
Write cycle time
—
—
10*
4
ms
Time to device busy
120
—
—
ns
Write start time
0*
5
—
—
ns
Reset protect time*
2
100
—
—
μ
s
μ
s
Reset high time*
2, 6
Notes: 1. t
and t
are defined as the time at which the outputs achieve the open circuit conditions and are
no longer driven.
2. This function is supported by only the HN58C257A series.
3. Use this device in longer cycle than this value.
4. t
must be longer than this value unless polling techniques or RDY/
Busy
(only the HN58C257A
series) are used. This device automatically completes the internal write operation within this value.
5. Next read or write operation can be initiated after t
DW
if polling techniques or RDY/
Busy
(only the
HN58C257A series) are used.
6. This parameter is sampled and not 100% tested.
7. A6 through A14 are page address and these addresses are latched at the first falling edge of
WE
.
8. A6 through A14 are page address and these addresses are latched at the first falling edge of
CE
.
9. See AC read characteristics.
1
—
—
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN58C256A | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
| HN58C256AFP-10 | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
| HN58C256AFP-85 | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
| HN58C256AT-85 | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
| HN58C257AT-85 | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN58C257AT10E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:EEPROM,Parallel,256K,5.0V,100ns,TSOP32 制造商:Renesas 功能描述:EEPROM Parallel 256K-bit 32K x 8 5V 32-Pin TSOP Tray |
| HN58C257AT-85 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
| HN58C257AT85E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:EEPROM,Parallel,256K,5.0V,85ns,TSOP32 制造商:Renesas 功能描述:EEPROM Parallel 256K-bit 32K x 8 5V 32-Pin TSOP Tray |
| HN58C257R-20 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 EEPROM |
| HN58C257SERIES | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 EEPROM |
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