參數(shù)資料
型號(hào): HN58C257AT-10
廠商: Hitachi,Ltd.
英文描述: 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)
中文描述: 256k的EEPROM(32 KWord的× 8位)就緒/忙和RES功能(HN58C257A)
文件頁數(shù): 5/25頁
文件大小: 126K
代理商: HN58C257AT-10
HN58C256A Series, HN58C257A Series
5
Recommended DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
V
SS
V
IL
V
IH
V
H
*
3
Topr
4.5
5.0
5.5
V
0
0
0
V
Input voltage
–0.3*
1
0.8
V
2.2
V
CC
+ 0.3*
2
V
V
CC
+ 1.0
70
V
CC
– 0.5
0
V
Operating temperature
Notes: 1. V
IL
min: –1.0 V for pulse width
50 ns.
2. V
IH
max: V
CC
+ 1.0 V for pulse width
50 ns.
3. This function is supported by only the HN58C257A series.
°
C
DC Characteristics
(Ta = 0 to +70°C, V
CC
= 5.0 V±10%)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Input leakage current
I
LI
I
LO
I
CC1
I
CC2
I
CC3
2*
1
μ
A
μ
A
μ
A
V
CC
= 5.5 V, Vin = 5.5 V
V
CC
= 5.5 V, Vout = 5.5/0.4 V
CE
= V
CC
CE
= V
IH
Iout = 0 mA, Duty = 100%,
Cycle = 1
μ
s at V
CC
= 5.5 V
Iout = 0 mA, Duty = 100%,
Cycle = 85 ns at V
CC
= 5.5 V
I
OL
= 2.1 mA
I
OH
= –400
μ
A
Output leakage current
2
Standby V
CC
current
20
1
mA
Operating V
CC
current
12
mA
30
mA
Output low voltage
V
OL
V
OH
0.4
V
Output high voltage
Note:
1. I
LI
on
RES
= 100
μ
A max (only the HN58C257A series)
2.4
V
Capacitance
(Ta = +25°C, f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Input capacitance*
1
Cin
6
pF
Vin = 0 V
Output capacitance*
1
Note:
1. This parameter is periodically sampled and not 100% tested.
Cout
12
pF
Vout = 0 V
相關(guān)PDF資料
PDF描述
HN58C256A 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)
HN58C256AFP-10 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)
HN58C256AFP-85 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)
HN58C256AT-85 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)
HN58C257AT-85 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)
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