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參數(shù)資料
| 型號(hào)： | HN58C256AI |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 32768-word ×8-bit Electrically Erasable and Programmable CMOS ROM(256k EEPROM (32k字 ×8位)) |
| 中文描述： | 32768字× 8位電可擦除和可編程的CMOS光盤（256k的EEPROM（32K的字× 8位）） |
| 文件頁(yè)數(shù)： | 4/19頁(yè) |
| 文件大?。?/td> | 141K |
| 代理商： | HN58C256AI |
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HN58C256AI Series
4
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage relative to V
SS
Input voltage relative to V
SS
Operating temperature range*
2
V
CC
Vin
–0.6 to +7.0
V
–0.5*
1
to +7.0*
3
V
Topr
–40 to +85
°
C
°
C
Storage temperature range
Notes: 1. Vin min = –3.0 V for pulse width
≤
50 ns
2. Including electrical characteristics and data retention
3. Should not exceed V
CC
+ 1.0 V.
Tstg
–55 to +125
Recommended DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
V
SS
V
IL
V
IH
Topr
4.5
5.0
5.5
V
0
0
0
V
Input voltage
–0.3*
1
—
0.6
V
3.0
—
V
CC
+ 0.3*
2
V
85
Operating temperature
Notes: 1. V
IL
min: –1.0 V for pulse width
≤
50 ns.
2. V
IH
max: V
CC
+ 1.0 V for pulse width
≤
50 ns.
–40
—
°
C
DC Characteristics
Supply voltage range (V
CC
), temperature range (Topr) and input voltage (V
IH
/V
IL
) are referred to the table
of Recommended DC Operating Conditions.
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Input leakage current
I
LI
I
LO
I
CC1
I
CC2
I
CC3
—
—
2
μ
A
μ
A
μ
A
V
CC
= 5.5 V, Vin = 5.5 V
V
CC
= 5.5 V, Vout = 5.5/0.4 V
CE
= V
CC
CE
= V
IH
Iout = 0 mA, Duty = 100%,
Cycle = 1
μ
s at V
CC
= 5.5 V
Iout = 0 mA, Duty = 100%,
Cycle = 85 ns at V
CC
= 5.5 V
I
OL
= 2.1 mA
I
OH
= –400
μ
A
Output leakage current
—
—
2
Standby V
CC
current
—
—
20
—
—
1
mA
Operating V
CC
current
—
—
12
mA
—
—
30
mA
Output low voltage
V
OL
V
OH
—
—
0.4
V
Output high voltage
V
CC
×
0.8
—
—
V
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相關(guān)代理商/技術(shù)參數(shù) |
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| HN58C256AP-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
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| HN58C256AP-85 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
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