參數(shù)資料
型號: HN58C256AI
廠商: Hitachi,Ltd.
英文描述: 32768-word ×8-bit Electrically Erasable and Programmable CMOS ROM(256k EEPROM (32k字 ×8位))
中文描述: 32768字× 8位電可擦除和可編程的CMOS光盤(256k的EEPROM(32K的字× 8位))
文件頁數(shù): 13/19頁
文件大?。?/td> 141K
代理商: HN58C256AI
HN58C256AI Series
13
Functional Description
Automatic Page Write
Page-mode write feature allows 1 to 64 bytes of data to be written into the EEPROM in a single write
cycle. Following the initial byte cycle, an additional 1 to 63 bytes can be written in the same manner. Each
additional byte load cycle must be started within 30
μ
s from the preceding falling edge of
WE
or
CE
.
When
CE
or
WE
is high for 100
μ
s after data input, the EEPROM enters write mode automatically and the
input data are written into the EEPROM.
Data
Polling
Data
polling indicates the status that the EEPROM is in write cycle or not. If EEPROM is set to read mode
during a write cycle, an inversion of the last byte of data outputs from I/O7 to indicate that the EEPROM is
performing a write operation.
WE
,
CE
Pin Operation
During a write cycle, addresses are latched by the falling edge of
WE
or
CE
, and data is latched by the
rising edge of
WE
or
CE
.
Write/Erase Endurance and Data Retention Time
The endurance is 10
5
cycles in case of the page programming and 10
4
cycles in case of the byte
programming (1% cumulative failure rate). The data retention time is more than 10 years when a device is
page-programmed less than 10
4
cycles.
相關(guān)PDF資料
PDF描述
HN58C256AP-10 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)
HN58C257AT-10 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)
HN58C256A 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)
HN58C256AFP-10 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)
HN58C256AFP-85 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)
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