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參數(shù)資料
| 型號： | HN1A01FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
| 中文描述： | 硅外延式進步黨（厘進程）通用音頻放大器應用 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 198K |
| 代理商： | HN1A01FE |
HN1A01FE
2007-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN1A01FE
Audio Frequency General Purpose Amplifier Applications
z
Small package (Dual type)
z
High voltage and high current
: V
CEO
=
50V, I
C
=
150mA (max)
z
High h
FE
: h
FE
= 120~400
z
Excellent h
FE
linearity
: h
FE
(I
C
=
0.1mA) / h
FE
(I
C
=
2mA) = 0.95 (typ.)
Absolute Maximum Ratings
(Ta = 25
°
C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
50
V
Collector-emitter voltage
50
5
150
30
V
Emitter-base voltage
V
Collector current
mA
Base current
mA
Collector power dissipation
100
mW
Junction temperature
150
°
C
Storage temperature range
55~150
°
C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Electrical Characteristics
(Ta = 25
°
C) (Q1,Q2 Common)
Characteristic
Symbol
Test
Circuit
―
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
Emitter cut-off current
I
CBO
I
EBO
h
FE (Note)
V
CE (sat)
f
T
C
ob
V
CB
=
50V, I
E
= 0
V
EB
=
5V, I
C
= 0
V
CE
=
6V, I
C
=
2mA
I
C
=
100mA, I
B
=
10mA
V
CE
=
10V, I
C
=
1mA
V
CB
=
10V, I
E
= 0, f = 1MHz
―
―
0.1
μ
A
―
―
―
0.1
μ
A
DC current gain
―
120
―
400
Collector-emitter saturation voltage
Transition frequency
―
―
0.1
0.3
V
―
80
―
―
MHz
Collector output capacitance
―
―
4
―
pF
Note:
h
FE
Classification Y (Y): 120~240, GR (G): 200~400 ( ) Marking Symbol
Marking Equivalent Circuit
(Top View)
JEDEC
JEITA
TOSHIBA
Weight: 3.0mg(typ.)
―
―
2-2N1A
Unit: mm
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PDF描述 |
|---|---|
| HN1A01FGR | TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN1A01FUGR | TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP |
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| HN1A01FY | TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP |
| HN1A01FU | PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
相關代理商/技術參數(shù) |
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