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參數(shù)資料
| 型號： | HN1A01FGR |
| 英文描述： | TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP |
| 中文描述： | 晶體管|晶體管|一對|進步黨| 50V五（巴西）總裁| 150毫安一（c）|的TSOP |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 150K |
| 代理商： | HN1A01FGR |
HN1A01F
2001-06-07
1
TOSHIBA Transistor Silicon PNP
Epitaxial
Type (PCT Process)
HN1A01F
Audio Frequency General Purpose Amplifier
Applications
Small package (dual type)
High voltage and high current
: V
CEO
=
50V, I
C
=
1
50mA (max)
High h
FE
: h
FE
=
1
20~400
Excellent h
FE
linearity
: h
FE
(I
C
=
0.
1
mA) / h
FE
(I
C
=
2mA) = 0.95 (typ.)
Maximum Ratings
(Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
150
mA
Base current
I
B
30
mA
Collector power dissipation
P
C
*
300
mW
Junction temperature
T
j
125
C
Storage temperature range
T
stg
55~125
C
*
Total rating
Electrical Characteristics
(Ta = 25 C) (Q1,Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
―
V
CB
=
50V, I
E
= 0
―
―
0.1
μA
Emitter cut-off current
I
EBO
―
V
EB
=
5V, I
C
= 0
―
―
0.1
μA
DC current gain
h
FE (note)
―
V
CE
=
6V, I
C
=
2mA
120
―
400
―
Collector-emitter saturation voltage
V
CE (sat)
―
I
C
=
100mA, I
B
=
10mA
―
0.1
0.3
V
Transition frequency
f
T
―
V
CE
=
10V, I
C
=
1mA
80
―
―
MHz
Collector output capacitance
C
ob
―
V
CB
=
10V, I
E
= 0,
f = 1MHz
―
4
7
pF
Note: hFE Classification
Y (Y):
1
20~240, GR (G): 200~400
( ) Marking Symbol
JEDEC
EIAJ
TOSHIBA
Weight: 0.015g
―
―
2-3N1A
Unit: mm
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