
HMS99C51S/52S/54S/56S/58S
Sep. 2004 Ver 1.01
43
FLASH MEMORY
Overview
The Flash memory increases EPROM and ROM functionality with in-circuit electrical erasure and program-
ming. It contains 4K, 8K, 16K, 24K or 32K bytes of program memory. This memory is both parallel and serial
In-System Programmable (ISP). ISP allows devices to alter their own program memory in the actual end product
under software control. A default serial loader (bootloader) program allows ISP of the Flash. The programming
does not require 12V external programming voltage. The necessary high programming voltage is generated on-
chip using the standard V
CC
pins of the microcontroller.
Features
Flash memory internal program memory.
Default loader in Boot ROM allows programming via the serial port without the need of a user pro-
vided loader.
Up to 64K byte external program memory if the internal program memory is disabled (EA = 0).
Programming and erase voltage with standard 5V V
CC
supply.
Read/Programming/Erase:
- Programming time per byte : 20us (TBD)
- Block erase/Total Erase time : 200ms (TBD)
- Typical programming time (32K bytes) is 10s at ISP mode (TBD)
Parallel programming with Atmel/Philips chip compatible hardware interface to programmer
Programmable security for the code in the Flash
Endurance : 10,000 cycles (TBD)
Data retention : 10 years (TBD)
Flash Programming and Erasure
There are three methods of programming the Flash memory:
First, the on-chip ISP bootloader may be invoked which will use low level routines to program. The
interface used for serial downloading of Flash memory is the UART.
Second, the Flash may be programmed or erased in the end-user application by calling low level
routines through a common entry point in the Boot ROM.
Third, the Flash may be programmed using the parallel method by using conventional EPROM
programmer. The commercially available programmers need to have support for the HMS99C51S/
52S/54S/56S/58S. The bootloader routines are located in the Boot ROM.