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參數(shù)資料
| 型號(hào)： | HMMC-5618 |
| 元件分類： | 放大器 |
| 英文描述： | 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.0326 X 0.0326 INCH, DIE |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 175K |
| 代理商： | HMMC-5618 |
2
DC Specifications/Physical Properties[1]
1. Backside ambient operating temperature TA = 25°C unless otherwise noted.
Symbol
Parameters/Conditions
Min.
Typ.
Max.
Units
VD1,VD2
Drain Supply Voltage
3.0
5.0
5.5
Volts
ID1
Stage–One Drain Supply Current
(
VD1=5V, VG1=Open or Ground)
50
mA
ID2
Stage–Two Drain Supply Current
(
VD2=5V, VG2=Open or Ground)
65
mA
ID1+ID2
Total Drain Supply Current
(
VD1=VD2=5V, VG1=VG2=Open or Ground)
115
140
mA
VP1
Optional Input–Stage Gate Supply Pinch–off Voltage
(VD1=5V, ID1 < 3 mA: Input Stage OFF[2])
2. The specified FET stage is in the OFF state when biased with a gate voltage level that is sufficient to pinch off the drain current.
4
2.8
Volts
IG1
Gate Supply Current (Input Stage OFF[2])
0.9
mA
VP2
Optional Output–Stage Gate Supply Pinch–off Voltage
(VD2=5V, ID2 < 3.6 mA: Output Stage OFF[2])
7.5
5.3
Volts
IG2
Gate Supply Current (Output Stage OFF[2])
1.7
mA
θch-bs
Thermal Resistance[3]
(Channel–to–Backside at Tch= 50°C)
3. Thermal resistance (in °C/Watt) at a channel temperature T(°C) can be estimated using the equation:
θ(T) 87 × [T(°C)+273] / [150°C+273].
87
°C/
Watt
Tch
Channel Temperature[4] (TA=100°C, MTTF=106 hrs,
(VD1=VD2=5V,VG1=VG2=Open)
150
°C
Notes:
4. De–rate MTTF by a factor of two for every 8°C above Tch.
RF Specifications
(TA=25°C, VD1=VD2=5V, VG1=VG2=Open or Ground, Z0=50)
Symbol
Parameters/Conditions
Typ.
6–18 GHz
5.9–20 GHz
Units
Min.
Max.
Min.
Max.
Gain
Small Signal Gain
14
12
11.5
dB
Gain
Gain flatness
±0.5
dB
S21/T
Temperature Coefficient of Gain
0.025
dB/°C
(RLin)MIN
Minimum Input Return Loss
12
10
9
dB
(RLout)MIN
Minimum Output Return Loss
12
10
dB
Isolation
Reverse Isolation
40
dB
P1dB
Output Power
at 1dB Gain Compression
18
17
dBm
PSAT
Saturated Output Power
(Pin=10 dBm)
20
18.5
dBm
NF
Noise Figure
5.5
7
dB
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