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參數(shù)資料
| 型號(hào)： | HMMC-5026 |
| 元件分類： | 放大器 |
| 英文描述： | 2000 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.1173 X 0.0303 INCH, DIE |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 113K |
| 代理商： | HMMC-5026 |
2
DC Specifications/Physical Properties[1] (Applies to all part numbers)
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
I
DSS
Saturated Drain Current (V
DD = 7.0 V, VG1 = 0 V, VG2 = open circut)
mA
115
180
250
V
p
First Gate Pinch-Off Voltage (V
DD = 7.0 V, IDD = 16 mA, VG2 = open circut)
V
-3.5
-1.5
-0.5
VG2
Secong Gate Self-Bias Voltage (VDD = 7.0 V, VG1 = 0 V)
V
2.1
IDSOFF
First Gate Pinch-Off Current (VDD = 7.0V, VG1 = -3.5V, VG2 = open circut)
mA
4
IDSOFF
Second Gate Pinch-Off Current (VDD = 5.0 V, VG1 = 0 V, VG2 = -3.5V)
mA
8
θ
ch-bs
Thermal Resistance (T
backside = 25°C)
°C/W
36
Notes:
1. Measured in wafer form withTchuck = 25°C. (Except θch-bs.)
HMMC-5021, -5026 RF Specifications, V
DD = 7.0 V, IDD(Q) = 150 mA, Z
in = Zo = 50
[1]
2.0–22.0 GHz
2.0–26.5 GHz
HMMC-5021
HMMC-5026
Symbol
Parameters/Conditions
Units
Typ.
Min.
Typ.
Max.
BW
Guaranteed Bandwidth
GHz
2-22
2
26.5
S
21
Small Signal Gain
dB
10
7.5
9.5
12
DS21
Small Signal Gain Flatness
dB
±0.5
±0.75
±1.0
RLin(min)
Minimum Input Return Loss
dB
16
10
14
RLout(min)
Minimum Output Return Loss
dB
13
10
13
Isolation
Minimum Reverse Isolation
dB
32
20
30
P
-1dB
Output Power at 1 dB Gain Compression
dBm
18
12
15
Psat
Saturated Output Power
dBm
20
14
17
H2(max)
Max. Second Harm. (2 <
o<20),
[Po(o) = 17 dBm or P-1dB, whichever is less.]
dBc
-25
-20
H3(max)
Max. Third Harm. (2 <
o<20),
[P
o(o) = 17 dBm or P-1dB, whichever is less.]
dBc
-34
-20
NF
Noise Figure
dB
8
10
Notes:
1. Small-signal data measured in wafer form with Tchuck = 25°C. Large-signal data measured on individual devices mounted in an HP83040 Series Modular
Microcircuit Package @ T
A = 25°C.
2. Performance may be extended to lower frequencies through the use of appropriate off-chip circuitry. Upper -3 dB corner frequency
≈ 29.5 GHz.
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| HMMC-5023 | 21200 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5025 | 2000 MHz - 50000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5025 | 2000 MHz - 50000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5026 | 2000 MHz - 26500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMMC-5021 | 2000 MHz - 22000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMMC-5027 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 26.5GHZ 8V CHIP - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5032 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5033 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL PWR AMP 32GHZ 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMC-5034 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:37-43 GHz Amplifier |
| HMMC-5038 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:38 GHz LNA |
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