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參數(shù)資料
| 型號(hào)： | HMMC-5025 |
| 廠(chǎng)商： | AGILENT TECHNOLOGIES INC |
| 元件分類(lèi)： | 放大器 |
| 英文描述： | 2000 MHz - 50000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.0677 X 0.0362 INCH, 0.0056 INCH HEIGHT, DIE |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 589K |
| 代理商： | HMMC-5025 |
2
DC Specications/Physical Properties1
Symbol
Parameters/Conditions
Min.
Typ.
Max.
Units
IDSS
Saturated Drain Current
130
150
170
mA
(VDD = 5.0 V, VG1 = 0.0 V, VG2 = open circuit)
VP
First Gate Pinch-Off Voltage
-1.7
-0.5
Volts
(VDD = 5.0 V, IDD = 15 mA, VG2 = open circuit)
VG2
Second Gate Self-Bias Voltage
2
Volts
(VDD = 5.0 V, IDD = 75 mA)
IDSOFF(VG1) First Gate Pinch-Off Current
6
10
mA
(VDD = 5.0 V, VG1 = -3.5 V, VG2 = open circuit)
IDSOFF(VG2) Second Gate Pinch-Off Current
(VDD = 5.0 V, IDD = 75 mA, VG2 = -2.5 V)
10
mA
Θch-bs
Thermal Resistance
63
°C/Watt
(Tbackside = 25°C)
1 Measured in wafer form with T
chuck = 25°C. (Except Θch-bs)
RF Specications1
(VDD = 5.0 V, IDD(Q) = 75 mA, Zin = Zo = 50 )
2.0-50.0 GHz
Symbol
Parameters/Conditions
Min.
Typ.
Max.
Units
BW
Guaranteed Bandwidth2
2
50
GHz
Gain
Small Signal Gain
7.0
8.5
dB
Gain
Small Signal Gain Flatness
±0.75
±1.5
dB
RLin
Input Return Loss
10
15
dB
RLout
Output Return Loss
10
15
dB
Isolation
Reverse Isolation
20
30
dB
P-1 dB
Output Power at 1 dB Gain
12
dBm
Compression @ 40 GHz
Psat
Saturated Output Power @ 40 GHz
16
dBm
H2
Second Harmonic (2 <o<26)
(Po(o) = 10 dBm
-35
dBc
H3
Third Harmonic (2 <o<26)
(Po(o) = 10 dBm
-25
dBc
NF
Noise Figure (2-35 GHz)
5.0
dB
NF
Noise Figure (35-50 GHz)
7.0
dB
1 Small-signal data measured in wafer form with T
chuck = 25°C. Harmonic data measured on individual device mounted in a microcircuit package @ TA = 25°C.
2 Performance may be extended to lower frequencies through the use of appropriate off-chip circuitry.
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