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參數(shù)資料
| 型號： | HMJE13003T |
| 廠商： | HSMC CORP. |
| 英文描述： | GT 4C 4#4 PIN RECP |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 38K |
| 代理商： | HMJE13003T |
HI-SINCERITY
MICROELECTRONICS CORP.
HMJE13003T
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HT200211
Issued Date : 2000.08.01
Revised Date : 2002.05.08
Page No. : 1/3
HMJE13003T
HSMC Product Specification
Description
The HMJE13003T is designed for high voltage. High speed switching
inductive circuits and amplifier applications.
Features
High Speed Switching
Low Saturation Voltage
High Reliability
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C).................................................................................... 3.5 W
Total Power Dissipation (Tc=25
°
C) ..................................................................................... 30 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 600 V
BVCEO Collector to Emitter Voltage.................................................................................. 400 V
BVEBO Emitter to Base Voltage............................................................................................ 8 V
IC Collector Current (DC)...................................................................................................... 1 A
IC Collector Current (Pulse) .................................................................................................. 2 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
Min.
600
400
8
-
-
-
-
-
-
10
10
6
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
0.8
0.9
1.2
1.8
50
-
-
Unit
V
V
V
uA
uA
V
V
V
V
Test Conditions
IC=1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=600V, IE=0
VBE=9V, IC=0
IC=0.1A, IB=10mA
IC=0.3A, IB=30mA
IC=0.1A, IB=10mA
IC=0.3A, IB=30mA
IC=0.3A, VCE=5V
IC=0.5A, VCE=5V
IC=1A, VCE=5V
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
TO-126
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