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HI-SINCERITY
MICROELECTRONICS CORP.
HMJE13003
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HT200210
Issued Date : 2001.01.01
Revised Date : 2002.05.08
Page No. : 1/3
HMJE13003
HSMC Product Specification
Description
High Voltage, High Speed Power Switch
Switch Regulators
PWM Inverters and Motor Controls
Solenoid and Relay Drivers
Deflection Circuits
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150
°
C
Junction Temperature...................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) ..................................................................................... 40 W
Maximum Voltages and Currents (Ta=25
°
C)
VCEX Collector to Emitter Voltage .................................................................................... 700 V
VCEO Collector to Emitter Voltage.................................................................................... 400 V
VEBO Emitter to Base Voltage.............................................................................................. 9 V
IC Collector Current ........................................................................................ Continuous 1.5 A
IB Base Current............................................................................................. Continuous 0.75 A
Characteristics
(Ta=25
°
C)
Symbol
BVCEX
BVCEO
IEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*VBE(sat)
*hFE1
*hFE2
Min.
700
400
-
-
-
-
-
-
-
8
5
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
1
1
500
1
3
1
1.2
40
25
Unit
V
V
mA
mA
mV
V
V
V
V
Test Conditions
IC=1mA, VBE(off)=1.5V
IC=10mA
VEB=9V
VCE=700V, VBE(off)=1.5V
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=0.5A, VCE=2V
IC=1A, VCE=2V
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
TO-126