參數(shù)資料
型號(hào)： HMC753LP4E
廠商： HITTITE MICROWAVE CORP
元件分類： 放大器
英文描述： 1000 MHz - 11000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝： 4 X 4 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, 24 PIN
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 699K
代理商： HMC753LP4E
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 1 - 11 GHz
v03.0111
General Description
Features
Functional Diagram
Noise figure: 1.5 dB @ 4 GHz
Gain: 17 dB
p1dB output power: +18 dBm
supply Voltage: +5V @ 55 mA
output ip3: +30 dBm
50 ohm matched input/output
24 lead plastic 4x4mm smT package: 16mm2
Electrical Specifications
, T
A = +25° C, Vdd= +5V, Idd = 55 mA
[2]
Typical Applications
This HmC753lp4e is ideal for:
point-to-point radios
point-to-multi-point radios
military & space
Test instrumentation
The HmC753lp4e is a GaAs mmiC low Noise
wideband Amplifier housed in a leadless 4x4 mm
plastic surface mount package. The amplifier oper-
ates between 1 and 11 GHz, providing up to 16.5 dB
of small signal gain, 1.5 dB noise figure, and output
ip3 of +30 dBm, while requiring only 55 mA from a
+5V supply. The p1dB output power of up to +18
dBm enables the lNA to function as a lo driver for
balanced, i/Q or image reject mixers. The HmC-
753lp4e also features i/os that are DC blocked and
internally matched to 50 ohms, making it ideal for
high capacity microwave radios or VsAT applications.
This versatile lNA is also available in die form as the
HmC-AlH444.
HMC753LP4E
parameter
min.
Typ.
max.
min.
Typ.
max.
Units
frequency range
1 - 6
6 - 11
GHz
Gain
14
16.5
10
14
dB
Gain Variation over Temperature
0.004
0.008
dB / °C
Noise figure
1.5
2
2.7
dB
input return loss
11
8
dB
output return loss
18
12
dB
output power for 1 dB Compression
18
15
dBm
saturated output power (psat)
20
17
dBm
output Third order intercept (ip3)
30
28
dBm
supply Current (idd)
(Vdd = 5V, set Vgg2 = 1.5V, Vgg1 = -0.8V Typ.)
55
mA
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