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參數(shù)資料
| 型號： | HMC816LP4E |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 230 MHz - 660 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 4 X 4 MM, ROHS COMPLIANT, PLASTIC, SMT, QFN-24 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 868K |
| 代理商： | HMC816LP4E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC816LP4E
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
v00.1108
General Description
Features
Functional Diagram
Typical Applications
Electrical Specifications, TA = +25° C,
Rbias 1, 2 = 10k Ohms*, Vdd = Vdd1, Vdd2 = +5V, Idd = Idd1, Idd2
The HmC816lp4e is a GaAs pHemT Dual Channel
low Noise Amplifier that is ideal for Cellular/3G and
lTe/wimAX/4G
basestation
front-end
receivers
operating between 230 and 660 mHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
22 dB gain and +37 dBm output ip3 from a single
supply of +5V. input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HmC816lp4e shares
the same package and pinout with the HmC817-
lp4e & HmC818lp4e lNAs. The HmC817lp4e can
be biased with +3V to +5V and features an externally
adjustable supply current which allows the designer
to tailor the linearity performance of each channel of
the lNA for each application.
low Noise figure: 0.5 dB
High Gain: 22 dB
High output ip3: +37 dBm
single supply: +3V to +5V
50 ohm matched input/output
24 lead 4x4mm QfN package: 16 mm2
The HmC816lp4e is ideal for:
Cellular/3G and lTe/wimAX/4G
BTs & infrastructure
repeaters and femtocells
public safety radio
multi-Channel Applications
parameter
Vdd = +3V
Vdd = +5V
Units
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
frequency range
230 - 450
450 - 660
230 - 450
450 - 660
mHz
Gain
17
21
14
17
19
22
15
19
dB
Gain Variation over Temperature
0.001
0.002
0.005
0.007
dB/ °C
Noise figure
0.5
0.9
0.5
0.9
0.5
0.9
0.5
0.9
dB
input return loss
13
17
15
16
dB
output return loss
12
10
13
10
dB
output power for 1 dB
Compression (p1dB)
10
14
13
16
15
19
18
21
dBm
saturated output power (psat)
10
15
14
16.5
16
20
18
21
dBm
output Third order intercept (ip3)
26
28
34
37
dBm
supply Current (idd)
24
34
44
24
34
44
68
97
126
68
97
126
mA
* rbias sets current, see application circuit herein
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相關(guān)代理商/技術(shù)參數(shù) |
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| HMC816LP4E_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz |
| HMC817LP4E | 制造商:Hittite Microwave Corp 功能描述:IC AMP LNA DUAL PHEMT 24-QFN |
| HMC817LP4E_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz |
| HMC818LP4E | 制造商:Hittite Microwave Corp 功能描述:IC AMP LNA DUAL PHEMT 24-QFN |
| HMC818LP4E_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs SMT pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz |
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