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參數(shù)資料
| 型號： | HMC715LP3 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 2100 MHz - 2900 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, PLASTIC, SMT, QFN-16 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 739K |
| 代理商： | HMC715LP3 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC715LP3 / 715LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
v01.0808
General Description
Features
Functional Diagram
The HmC715lp3(e) is a GaAs pHemT mmiC
low Noise Amplifier that is ideal for Cellular/3G and
lTe/wimAX/4G
basestation
front-end
receivers
operating between 2.1 and 2.9 GHz. The amplifier
has been optimized to provide 0.9 dB noise figure,
19 dB gain and +33 dBm output ip3 from a single
supply of +5V. input and output return losses are
excellent and the lNA requires minimal external
matching and bias decoupling components. The
HmC715lp3(e) can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the lNA for each application.
Noise figure: 0.9 dB
Gain: 19 dB
output ip3: +33 dBm
single supply: +3V to +5V
16 lead 3x3mm QfN package: 9 mm2
Typical Applications
The HmC715lp3(e) is ideal for:
Cellular/3G and lTe/wimAX/4G
BTs & infrastructure
repeaters and femtocells
public safety radio
Access points
Electrical Specifications
T
A = +25° C, Rbias = 2k Ohms for Vdd = +5V, Rbias = 47k Ohms for Vdd = +3V
[1]
parameter
Vdd = +3V
Vdd = +5V
Units
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
min.
Typ.
max.
frequency range
2.1 - 2.9
2.3 - 2.7
2.1 - 2.9
2.3 - 2.7
mHz
Gain
14.5
18
15
18
15.5
19
16.5
19
dB
Gain Variation over Temperature
0.01
dB/ °C
Noise figure
0.9
1.2
0.9
1.2
0.9
1.2
0.9
1.2
dB
input return loss
11.5
11
11.5
11
dB
output return loss
14
13.5
12.5
12
dB
output power for 1 dB
Compression (p1dB)
10.5
14.5
12.5
15
19
16.5
19.5
dBm
saturated output power (psat)
16
16.5
20
20.5
dBm
output Third order intercept (ip3)
28
28.5
33
33.5
dBm
supply Current (idd)
47
65
47
65
95
126
95
126
mA
[1] rbias resistor sets current, see application circuit herein
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC715LP3E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA PHEMT 16-QFN |
| HMC716LP3 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9 GHz |
| HMC716LP3E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA PHEMT 16-QFN |
| HMC716LP3ETR | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA PHEMT 16-QFN |
| HMC717ALP3E | 功能描述:LNA W/ ADJ BIAS, 4.9 TO 6.0GHZ 制造商:analog devices inc. 系列:- 包裝:剪帶 零件狀態(tài):在售 頻率:4.8GHz ~ 6GHz P1dB:18dBm 增益:14.5dB 噪聲系數(shù):1.1dB RF 類型:LTE，WiMax 電壓 - 電源:3V 電流 - 電源:68mA 測試頻率:4.8GHz ~ 6GHz 封裝/外殼:16-VFQFN 裸露焊盤 供應商器件封裝:16-QFN（3x3） 標準包裝:1 |
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