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參數(shù)資料
| 型號： | HMC716LP3 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 3100 MHz - 3900 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, PLASTIC, SMT, QFN-16 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 728K |
| 代理商： | HMC716LP3 |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC716LP3 / 716LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9 GHz
v02.1009
General Description
Features
Functional Diagram
The HmC716lp3(e) is a GaAs pHemT mmiC
low Noise Amplifier that is ideal for fixed wireless
and lTe/wimAX/4G basestation front-end receivers
operating between 3.1 and 3.9 GHz. The amplifier
has been optimized to provide 1 dB noise figure,
18 dB gain and +33 dBm output ip3 from a single
supply of +5V. input and output return losses are
excellent and the lNA requires minimal external
matching and bias decoupling components. The
HmC716lp3(e) can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the lNA for each application.
Noise figure: 1 dB
Gain: 18 dB
output ip3: +33 dBm
single supply: +3V to +5V
50 ohm matched input/output
16 lead 3x3mm QfN package: 9 mm2
Typical Applications
The HmC716lp3(e) is ideal for:
fixed wireless and lTe/wimAX/4G
BTs & infrastructure
repeaters and femtocells
public safety radio
Access points
Electrical Specifications
T
A = +25 °C, Rbias = 820Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V
[1]
parameter
Vdd = +3V
Vdd = +5V
Units
min.
Typ.
max.
min.
Typ.
max.
frequency range
3.1 - 3.9
mHz
Gain
13
17
15.5
18
dB
Gain Variation over Temperature
0.01
dB/ °C
Noise figure
1
1.3
1
1.3
dB
input return loss
25
30
dB
output return loss
13
16
dB
output power for 1 dB Compression (p1dB)
12
15
16
19
dBm
saturated output power (psat)
16.5
20.5
dBm
output Third order intercept (ip3)
26
33
dBm
supply Current (idd)
41
55
65
90
mA
[1] rbias resistor sets current, see application circuit herein
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC716LP3E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA PHEMT 16-QFN |
| HMC716LP3ETR | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA PHEMT 16-QFN |
| HMC717ALP3E | 功能描述:LNA W/ ADJ BIAS, 4.9 TO 6.0GHZ 制造商:analog devices inc. 系列:- 包裝:剪帶 零件狀態(tài):在售 頻率:4.8GHz ~ 6GHz P1dB:18dBm 增益:14.5dB 噪聲系數(shù):1.1dB RF 類型:LTE，WiMax 電壓 - 電源:3V 電流 - 電源:68mA 測試頻率:4.8GHz ~ 6GHz 封裝/外殼:16-VFQFN 裸露焊盤 供應(yīng)商器件封裝:16-QFN（3x3） 標(biāo)準包裝:1 |
| HMC717ALP3ETR | 功能描述:IC MMIC AMP PHEMT LN 16QFN 制造商:analog devices inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 頻率:4.8GHz ~ 6GHz P1dB:18.5dBm 增益:16.5dB 噪聲系數(shù):1.25dB RF 類型:LTE，WiMax 電壓 - 電源:3 V ~ 5 V 電流 - 電源:73mA 測試頻率:4.8GHz ~ 6GHz 封裝/外殼:16-VFQFN 裸露焊盤 供應(yīng)商器件封裝:16-QFN（3x3） 標(biāo)準包裝:1 |
| HMC717LP3 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz |
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