參數(shù)資料
型號: HMC609LC4
廠商: HITTITE MICROWAVE CORP
元件分類: 放大器
英文描述: 2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: 4 X 4 MM, ROHS COMPLIANT, SMT, 24 PIN
文件頁數(shù): 1/8頁
文件大?。?/td> 301K
代理商: HMC609LC4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
L
O
W
NO
IS
E
A
M
P
L
IF
IE
R
S
-
SM
T
8
8 - 230
HMC609LC4
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
v02.0508
General Description
Features
Functional Diagram
The HMC609LC4 is a GaAs PHEMT MMIC Low
Noise Amplifier (LNA) which operates from 2 to 4
GHz. The HMC609LC4 features extremely flat per-
formance characteristics including 20 dB of small
signal gain, 3.5 dB of noise figure and output IP3 of
+36.5 dBm across the operating band. This 50 Ohm
matched amplifier does not require any external
matching components. The HMC609LC4 is compatible
with
high
volume
surface
mount
manufacturing
techniques, and the RF I/Os are DC blocked for fur-
ther ease of integration.
Excellent Gain Flatness: ±0.4 dB
High Gain: 20 dB
Low Noise Figure: 3.5 dB
Output IP3: +36.5 dBm
50 Ohm Matched & DC Blocked RF I/Os
RoHS Compliant 4x4 mm SMT package
Electrical Specifications, T
A = +25° C, Vdd1 = Vdd2 = +6V, Idd1 + Idd2 = 170mA
[1]
Typical Applications
The HMC609LC4 is ideal for:
Fixed Microwave
Test & Measurement Equipment
Radar & Sensors
Military & Space
Parameter
Min.
Typ.
Max.
Units
Frequency Range
2 - 4
GHz
Gain
17
20
dB
Gain Variation Over Temperature
0.015
0.02
dB/ °C
Noise Figure
3.5
5.5
dB
Input Return Loss
17
dB
Output Return Loss
15
dB
Output Power for 1 dB
Compression (P1dB)
18.5
21.5
dBm
Saturated Output Power (Psat)
23
dBm
Output Third Order Intercept (IP3)
36.5
dBm
Supply Current (Idd1 + Idd2)
170
220
mA
[1] Adjust Vgg between -1.5V to -0.5V (Typical -0.9V) to achieve total drain bias of 170mA
相關PDF資料
PDF描述
HMC609LC4TR 2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC613LC4B 100 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC619LP5E 0 MHz - 10000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
HMC619 0 MHz - 10000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
HMC620 3000 MHz - 7000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 9 dB CONVERSION LOSS-MAX
相關代理商/技術參數(shù)
參數(shù)描述
HMC609LC4_09 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz
HMC609-SX 功能描述:IC MMIC LNA GAAS DIE 制造商:analog devices inc. 系列:- 包裝:托盤 零件狀態(tài):在售 頻率:2GHz ~ 4GHz P1dB:21dBm 增益:20.5dB 噪聲系數(shù):3dB RF 類型:雷達 電壓 - 電源:6V 電流 - 電源:170mA 測試頻率:2GHz ~ 4GHz 封裝/外殼:模具 供應商器件封裝:模具 標準包裝:2
HMC60DRAH 功能描述:CONN EDGECARD 120PS R/A .100 SLD RoHS:是 類別:連接器,互連式 >> Card Edge 系列:- 標準包裝:1 系列:- 卡類型:非指定 - 雙邊 類型:母頭 Number of Positions/Bay/Row:36 位置數(shù):72 卡厚度:0.062"(1.57mm) 行數(shù):2 間距:0.100"(2.54mm) 特點:- 安裝類型:面板安裝 端子:焊接孔眼 觸點材料:磷青銅 觸點表面涂層:金 觸點涂層厚度:10µin(0.25µm) 觸點類型::全波紋管 顏色:藍 包裝:管件 法蘭特點:頂部安裝開口,螺紋插件,4-40 材料 - 絕緣體:聚對苯二甲酸丁二酯(PBT) 工作溫度:-65°C ~ 125°C 讀數(shù):雙
HMC60DRAH-S734 功能描述:CONN EDGECARD 120PS .100 R/A PCB RoHS:是 類別:連接器,互連式 >> Card Edge 系列:- 標準包裝:1 系列:- 卡類型:非指定 - 雙邊 類型:母頭 Number of Positions/Bay/Row:36 位置數(shù):72 卡厚度:0.062"(1.57mm) 行數(shù):2 間距:0.100"(2.54mm) 特點:- 安裝類型:面板安裝 端子:焊接孔眼 觸點材料:磷青銅 觸點表面涂層:金 觸點涂層厚度:10µin(0.25µm) 觸點類型::全波紋管 顏色:藍 包裝:管件 法蘭特點:頂部安裝開口,螺紋插件,4-40 材料 - 絕緣體:聚對苯二甲酸丁二酯(PBT) 工作溫度:-65°C ~ 125°C 讀數(shù):雙
HMC60DRAI 功能描述:CONN EDGECARD 120PS R/A .100 SLD RoHS:是 類別:連接器,互連式 >> Card Edge 系列:- 標準包裝:1 系列:- 卡類型:非指定 - 雙邊 類型:母頭 Number of Positions/Bay/Row:36 位置數(shù):72 卡厚度:0.062"(1.57mm) 行數(shù):2 間距:0.100"(2.54mm) 特點:- 安裝類型:面板安裝 端子:焊接孔眼 觸點材料:磷青銅 觸點表面涂層:金 觸點涂層厚度:10µin(0.25µm) 觸點類型::全波紋管 顏色:藍 包裝:管件 法蘭特點:頂部安裝開口,螺紋插件,4-40 材料 - 絕緣體:聚對苯二甲酸丁二酯(PBT) 工作溫度:-65°C ~ 125°C 讀數(shù):雙