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參數(shù)資料
| 型號： | HMC619 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 10000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 3.38 X 2.05 MM, 0.10 MM HEIGHT, DIE-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 292K |
| 代理商： | HMC619 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC619
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
v01.0308
General Description
Features
Functional Diagram
The HMC619 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC and
10 GHz. The amplifier provides 12 dB of gain,
+37 dBm output IP3 and +28 dBm of output power
at 1 dB gain compression while requiring 300 mA
from a +12V supply. Gain flatness is excellent at ±0.4
dB from DC to 7 GHz making the HMC619 ideal for
EW, ECM, Radar and test equipment applications.
The HMC619 amplifier I/Os are internally matched
to 50 ohms facilitating integration into Mutli-Chip-
Modules (MCMs). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of mini-
mal length 0.31 mm (12 mils).
P1dB Output Power: +28 dBm
Gain: 12 dB
Output IP3: +37 dBm
Supply Voltage: +12V @ 300 mA
50 Ohm Matched Input/Output
Die Size: 3.38 x 2.05 x 0.1 mm
Typical Applications
The HMC619 is ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military & Space
Test Instrumentation
Fiber Optics
Electrical Specifications, T
A = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 300 mA*
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
DC - 3
3 - 7
7 - 10
GHz
Gain
9.8
12.8
9.0
12
8.5
11.5
dB
Gain Flatness
±0.3
±0.4
dB
Gain Variation Over Temperature
0.014
0.016
0.023
dB/ °C
Input Return Loss
12.5
13.5
dB
Output Return Loss
21
25
17
dB
Output Power for 1 dB Compression (P1dB)
25.5
28
25
27.5
24
26.5
dBm
Saturated Output Power (Psat)
28.5
28
27.5
dBm
Output Third Order Intercept (IP3)
42
40
37
dBm
Noise Figure
4
5
7
dB
Supply Current
(Idd) (Vdd= 12V Typ.)
300
mA
* Adjust Vgg1 between -2V to 0V to achieve Idd= 300 mA typical.
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