參數(shù)資料
型號(hào): HMC496LP3E
廠商: 美國(guó)訊泰微波有限公司上海代表處
英文描述: SiGe WIDEBAND DIRECT MODULATOR RFIC, 4.0 - 7.0 GHz
中文描述: 寬頻帶直接硅鍺射頻調(diào)制器,4.0 - 7.0吉赫
文件頁(yè)數(shù): 2/10頁(yè)
文件大?。?/td> 487K
代理商: HMC496LP3E
M
8
8 - 15
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Electrical Specifications,
(continued)
Parameter
Conditions
Min.
Typ.
Max.
Units
RF Output
RF Frequency Range
4.0
7.0
GHz
RF Return Loss
8
dB
LO Input
LO Frequency Range
4.0
7.0
GHz
LO Input Power
-3
+3
+9
dBm
LO Port Return Loss
10
dB
Baseband Input Port
Baseband Port Bandwidth
With 50
Ω
source & external 10 pF shunt cap to ground.
Refer to HMC496LP3 Application Circuit.
DC
250
MHz
Baseband Input DC Voltage (Vbbdc)
This parameter can be varied in order to optimize
the device performance over temperature and/or supply.
1.0
1.3
1.6
V
Baseband Input DC Bias Current (Ibbdc)
Single-ended
32
μA
Baseband Input Capacitance
Single-ended. De-embeded to the part pin.
0.8
pF
DC Power Requirements
See Test Conditions Below
Supply Voltage (Vcc)
2.7
3.0
3.3
V
Supply Current (Icc)
93
mA
Test Conditions:
Unless Otherwise Specified, the Following Test Conditions Were Used
Calibrated vs. Uncalibrated Test Results
During the Uncalibrated Sideband and Carrier Suppression tests, care is taken to ensure that the I/Q signal paths from
the Vector Signal Generator (VSG) to the Device Under Test (DUT) are equal. The “Uncalibrated, +25 °C” Sideband
and Carrier Suppression plots were measured at room temperature, while the “Uncalibrated, over Temperature”
Sideband and Carrier Suppression plots represent the worst case uncalibrated suppression levels measured at T=
-40 °C, +25 °C, and +85 °C.
The “Calibrated, +25 °C” Sideband Suppression data was plotted after a manual adjustment of the I/Q amplitude
balance and I/Q phase offset (skew) at +25C, and an LO input power level of + 3 dBm. This adjustment setting was
held constant during tests over LO input power level and temperature. The “Calibrated, over Temperature” plots
represent the worst case calibrated Sideband Suppression levels at T= -40 °C, +25 °C, and +85 °C.
The “Calibrated, +25 °C” Carrier Suppression data was plotted after a manual adjustment of the Ip/In & Qp/Qn DC
offsets at +25 °C, and an LO input power level of + 3 dBm. This adjustment setting was held constant during tests
over LO input power level and temperature. The “Calibrated, over Temperature” plots represent the worst case Carrier
Suppression levels measured at T= -40 °C, +25 °C, and +85 °C.
Parameter
Condition
Temperature
+25 °C
Baseband Input Frequency
200 kHz
Baseband Input DC Voltage (Vbbdc)
1.3V
Baseband Input AC Voltage (Peak to Peak Differential, I and Q)
1.2V
Baseband Input AC Voltage for OIP3 Measurement (Peak to Peak Differential, I and Q)
600 mV per tone @ 150 & 250 kHz
Frequency Offset for Output Noise Measurements
20 MHz
Supply & Bias Voltage (Vb1, Vb2, Vcc1, Vcc2)
+3.0V
LO Input Power
+3 dBm
LO Input Mode
Single-Ended
Mounting Configuration
Refer to HMC496LP3 Application Schematic Herein
Sideband & Carrier Suppression
Uncalibrated
RF Output Mode
Differential
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 4.0 - 7.0 GHz
v03.0206
HMC496LP3
/
496LP3E
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