參數(shù)資料
型號(hào): HMC498LC4
廠商: 美國(guó)訊泰微波有限公司上海代表處
英文描述: GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz
中文描述: GaAs PHEMT的介質(zhì)功率放大器,17 - 24千兆赫
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 339K
代理商: HMC498LC4
A
5
5 - 512
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC498LC4
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 17 - 24 GHz
v00.0904
General Description
Features
Functional Diagram
The HMC498LC4 is a high dynamic range GaAs
PHEMT MMIC Medium Power Amplifier housed in a
leadless “Pb free” SMT package. Operating from 17
to 24 GHz, the amplifier provides 22 dB of gain, +26
dBm of saturated power and 23% PAE from a +5.0 V
supply voltage. Noise figure is 4 dB while output IP3 is
+36 dBm typical enabling the HMC498LC4 to function
as a low noise front end as well as a driver amplifier.
The RF I/Os are DC blocked and matched to 50 Ohms
for ease of use. The HMC498LC4 eliminates the
need for wire bonding, allowing use of surface mount
manufacturing techniques.
+36 dBm Output IP3
Saturated Power: +26 dBm @ 23% PAE
22 dB Gain
+5.0 V @ 250 mA Supply
50 Ohm Matched Input/Output
RoHS Compliant 4x4 mm SMT Package
Electrical Specifications,
T
A
= +25° C, Vdd1, 2, 3 = 5V, Idd = 250 mA*
Typical Applications
The HMC498LC4 is ideal for use as a LNA or Driver
amplifier for:
Point-to-Point Radios
Point-to-Multi-Point Radios & VSAT
Test Equipment & Sensors
Military End-Use
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
17 - 19
19 - 23
23 - 24
GHz
Gain
18
22
20
22.5
18
21
dB
Gain Variation Over Temperature
0.02
0.03
0.02
0.03
0.02
0.03
dB/ °C
Input Return Loss
13
13
10
dB
Output Return Loss
15
15
20
dB
Output Power for 1 dB Compression (P1dB)
22
25
21.5
24.5
22.5
25.5
dBm
Saturated Output Power (Psat)
26.5
25.5
26.5
dBm
Output Third Order Intercept (IP3)
35
36
35.5
dBm
Noise Figure
4.0
4.0
4.5
dB
Supply Current (Idd)(Vdd = +5V, Vgg = -0.8V
Typ.)
250
250
250
mA
* Adjust Vgg between -2 to 0V to achieve Idd = 250 mA typical.
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