參數(shù)資料
型號: HMC495LP3E
廠商: 美國訊泰微波有限公司上海代表處
英文描述: SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz
中文描述: 寬頻帶直接硅鍺射頻調(diào)制器,250 - 3800兆赫
文件頁數(shù): 2/12頁
文件大?。?/td> 626K
代理商: HMC495LP3E
M
8
8 - 3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Electrical Specifications,
(continued)
Parameter
Conditions
Min.
Typ.
Max.
Units
RF Output
RF Frequency Range
0.25
3.8
GHz
RF Return Loss
16
dB
LO Input
LO Frequency Range
0.25
3.8
GHz
LO Input Power
With 68 Ohm shunt resistor on LO port.
-6
0
+6
dBm
LO Port Return Loss
With 68 Ohm shunt resistor on LO port.
7
dB
Baseband Input Port
Baseband Port Bandwidth
With 50
Ω
source & external 10 pF shunt cap to ground.
Refer to HMC495LP3 Application Circuit.
DC
250
MHz
Baseband Input DC Voltage (Vbbdc)
This parameter can be varied in order to optimize
the device performance over temperature and/or supply.
1.0
1.15
1.2
V
Baseband Input DC Bias Current (Ibbdc)
Single-ended.
40
μA
Single-ended Baseband Input Capacitance
De-embed to the lead of the device.
0.5
pF
DC Power Requirements
See Test Conditions Below
Supply Voltage (Vcc1, Vcc2, Vb1, Vb2)
3
3.3
3.6
V
Supply Current (Icc1, Icc2, Ib1, Ib2)
108
mA
Parameter
Condition
Temperature
+25 °C
Baseband Input Frequency
200 kHz
Baseband Input DC Voltage (Vbbdc)
1.15V
Baseband Input AC Voltage (Peak to Peak Differential, I and Q)
800 mV
Baseband Input AC Voltage for OIP3 Measurement (Peak to Peak Differential, I and Q)
400 mV per tone @ 150 & 250 kHz
Frequency Offset for Output Noise Measurements
20 MHz
Supply & Bias Voltage (Vb1, Vb2, Vcc1, Vcc2)
3.3V
LO Input Power
0 dBm
LO Input Mode
Single-Ended
Mounting Configuration
Refer to HMC495LP3 Application Schematic Herein
Sideband & Carrier Feedthrough
Uncalibrated
Test Conditions:
Unless Otherwise Specified, the Following Test Conditions Were Used
Calibrated vs. Uncalibrated Test Results
During the Uncalibrated Sideband and Carrier Suppression tests, care is taken to ensure that the I/Q signal paths from
the Vector Signal Generator (VSG) to the Device Under Test (DUT) are equal. The “Uncalibrated, +25 °C” Sideband
and Carrier Suppression plots were measured at room temperature, while the “Uncalibrated, over Temperature”
Sideband and Carrier Suppression plots represent the worst case uncalibrated suppression levels measured at T=
-40 °C, +25 °C, and +85 °C.
The “Calibrated, + 25 °C” Sideband Suppression data was plotted after a manual adjustment of the I/Q amplitude
balance and I/Q phase offset (skew) at +25 °C, and at each LO input power level. The +25 °C adjustment settings
were held constant during tests over temperature. The “Calibrated, over Temperature” plots represent the worst case
calibrated Sideband Suppression levels at T= -40 °C, +25 °C, and +85 °C.
The “Calibrated, +25 °C” Carrier Suppression data was plotted after a manual adjustment of the Ip/In & Qp/Qn DC
offsets at +25 °C, and at each LO input power level. The +25 °C adjustment settings were held constant during tests
over temperature. The “Calibrated, over Temperature” plots represent the worst case Carrier Suppression levels
measured at T= -40 °C, +25 °C, and +85 °C.
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
v02.0705
HMC495LP3
/
495LP3E
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