參數(shù)資料
型號: HMC484MS8G
廠商: 美國訊泰微波有限公司上海代表處
英文描述: GaAs MMIC 10 WATT T/R SWITCH DC - 3.0 GHz
中文描述: 砷化鎵微波單片集成電路10瓦特T / R開關(guān)直流- 3.0吉赫
文件頁數(shù): 6/8頁
文件大?。?/td> 270K
代理商: HMC484MS8G
MICROWAVE CORPORATION
14 - 265
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
S
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
A
See truth table and control voltage table.
2
B
See truth table and control voltage table.
3, 5, 8
RFC, RF1, RF2
This pin is DC coupled and matched to 50 Ohms.
Blocking capacitors are required.
4
Vdd
Supply Voltage
6, 7
GND
Package bottom must also
be connected to PCB RF ground.
HMC484MS8G
GaAs MMIC 10 WATT T/R SWITCH
DC - 3.0 GHz
v01.0404
Notes:
1. Set logic gate and switch Vdd = +3V to +10V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of +3 to +10 Volts applied to the CMOS
logic gates and to pin 4 of the RF switch.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency
of operation.
4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower
RF power capability) at bias voltages down to +3V.
Typical Application Circuit
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