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參數(shù)資料
| 型號： | HMC484MS8G |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs MMIC 10 WATT T/R SWITCH DC - 3.0 GHz |
| 中文描述： | 砷化鎵微波單片集成電路10瓦特T / R開關(guān)直流- 3.0吉赫 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 270K |
| 代理商： | HMC484MS8G |
MICROWAVE CORPORATION
14 - 264
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
S
14
Truth Table
Absolute Maximum Ratings
Outline Drawing
Control Input (Vctl)
Signal Path State
A
B
RFC to RF1
RFC to RF2
High
Low
Off
On
Low
High
On
Off
Low
Low
Off
Off
RF Input Power (Vctl = 0V/+8V)
(0.5 - 3 GHz)
+40 dBm (T = +85 °C)
Supply Voltage Range (Vdd)
(Vctl = 0V)
+13 Vdc
Control Voltage Range (A & B)
Vdd - 13 Vdc to Vdd + 0.7 Vdc
Hot Switch Power Level
(Vdd = +8V)
39 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 25 mW/°C above 85 °C)
1.6 W
Thermal Resistance
40 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
HMC484MS8G
GaAs MMIC 10 WATT T/R SWITCH
DC - 3.0 GHz
v01.0404
Typical 0.5 to 3.0 GHz
Compression vs. Bias Voltage (Vdd)
Bias Vdd
Input Power for 0.1 dB
Compression
Input Power for 1.0 dB
Compression
(Volts)
(dBm)
(dBm)
+3
32
35.5
+5
36
40
+8
39
>40
+10
>40
>40
Control Voltages
Bias Voltage & Current
Vdd (Vdc)
Typical Idd (μA)
+3
0.5
+5
10
+8
50
+10
75
State
Bias Condition
Low
0 to +0.2 Vdc @ 10 μA Typical
High
Vdd ± 0.2 Vdc @ 10 μA Typical
Note: DC blocking capacitors are required at ports RFC,
RF1 and RF2. Their value will determine the lowest trans-
mission frequency.
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
8. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.
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| HMC485MS8G | HIGH IP3 GaAs MMIC MIXER with INTEGRATED LO AMPLIFIER, 1.7 - 2.2 GHz |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC484MS8G_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz |
| HMC484MS8G_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz |
| HMC484MS8GE | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz |
| HMC485MS8G | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:HIGH IP3 GaAs MMIC MIXER with INTEGRATED LO AMPLIFIER, 1.7 - 2.4 GHz |
| HMC485MS8G_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:HIGH IP3 GaAs MMIC MIXER with INTEGRATED LO AMPLIFIER, 1.7 - 2.4 GHz |
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