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參數(shù)資料
| 型號： | HMC481ST89 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz |
| 中文描述： | SiGe HBT增益塊MMIC放大器，直流- 5.0吉赫 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 205K |
| 代理商： | HMC481ST89 |
MICROWAVE CORPORATION
8 - 258
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
HMC481MP86
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
v00.0603
Application Circuit
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins must be connected to RF/DC ground.
Recommended Component Values for Key Application Frequencies
Component
Frequency (MHz)
50
900
1900
2200
2400
3500
5000
L1
270 nH
56 nH
18 nH
18 nH
15 nH
8.2 nH
6.8 nH
C1, C2
0.01 μF
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R
BIAS
provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc= 74 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
6V
8V
10V
12V
R
BIAS
V
ALUE
11
39
62
91
R
BIAS
P
OWER
R
ATING
1/8 W
1/4 W
1/2 W
1 W
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