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參數(shù)資料
| 型號： | HMC481ST89 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz |
| 中文描述： | SiGe HBT增益塊MMIC放大器，直流- 5.0吉赫 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 205K |
| 代理商： | HMC481ST89 |
MICROWAVE CORPORATION
8 - 257
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
HMC481MP86
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
v00.0603
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
Collector Bias Current (Icc)
100 mA
RF Input Power (RFin)(Vcc = +5.15 Vdc)
+17 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 11.6 mW/°C above 85 °C)
0.753 W
Thermal Resistance
(junction to lead)
86.3 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
7. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATABLE WITH
THE “MICRO-X PACKAGE”
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| HMC482ST89 | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz |
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相關(guān)代理商/技術(shù)參數(shù) |
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| HMC481ST89_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz |
| HMC481ST89E | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP HBT 5GHZ SOT-89 |
| HMC482 | 制造商:Hubbell Wiring Device-Kellems 功能描述:MINIPORT, 8PORT, W/CON, 4 WIRE |
| HMC482ST89 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz |
| HMC482ST89_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz |
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