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參數(shù)資料
| 型號： | HMC464LP5 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz |
| 中文描述： | 的GaAs PHEMT MMIC功率放大器，2.0 - 20.0千兆赫 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 237K |
| 代理商： | HMC464LP5 |
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
1
HMC464
v02.0704
GaAs PHEMT MMIC
POWER AMPLIFIER, 2.0 - 20.0 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane with conductive epoxy (see HMC general Handling, Mounting, Bonding
Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF
to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised
0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to
attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached
to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-
substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and
flat.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC464LP5_09 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz |
| HMC464LP5E | 制造商:Hittite Microwave Corp 功能描述:IC PWR AMP MMIC WB PHEMT 32SMD |
| HMC464-SX | 功能描述:RF Amplifier IC General Purpose 2GHz ~ 20GHz Die 制造商:analog devices inc. 系列:- 包裝:托盤 零件狀態(tài):有效 頻率:2GHz ~ 20GHz P1dB:26dBm 增益:16dB 噪聲系數(shù):4dB RF 類型:通用 電壓 - 電源:8V 電流 - 電源:290mA 測試頻率:- 封裝/外殼:模具 供應(yīng)商器件封裝:模具 標準包裝:2 |
| HMC465 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:ACTIVE BIAS CONTROLLER |
| HMC465_10 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs pHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20 GHz |
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