參數(shù)資料
型號: HMC308
廠商: 美國訊泰微波有限公司上海代表處
英文描述: GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz
中文描述: 一般用途100毫瓦砷化鎵MMIC放大器,0.8 - 3.8吉赫
文件頁數(shù): 1/8頁
文件大?。?/td> 261K
代理商: HMC308
MICROWAVE CORPORATION
8 - 42
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
A
8
HMC308
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz
v03.1103
General Description
Features
Functional Diagram
The HMC308 is a low cost MESFET MMIC ampli-
fier that operates from a single +3 to +5V supply
from 0.8 to 3.8 GHz. The surface mount SOT26
amplifier can be used as a broadband amplifier
stage or used with external matching for optimized
narrow band applications. With Vdd biased at +5V,
the HMC308 offers 18 dB of gain and +20 dBm of
saturated output power while requiring only 53 mA
of current. This amplifier is ideal as a driver amplifier
for transmitters or for use as a local oscillator (LO)
amplifier to increase drive levels for passive mixers.
The amplifier occupies 0.014 in
2
(9 mm
2
), making it
ideal for compact radio designs.
Gain: 18 dB
P1dB Output Power: +17 dBm@ +5V
Single Supply: +3V or +5V
No External Components
Integrated DC Blocks
Ultra Small Package: SOT26
Electrical Specifications,
T
A
= +25° C, as a function of Vdd
Typical Applications
Broadband or Narrow Band Applications:
Cellular/PCS/3G
Fixed Wireless & Telematics
Cable Modem Termination Systems
WLAN, Bluetooth & RFID
Parameter
Vdd = +3V
Vdd = +5V
Vdd = +5V
Vdd = +5V
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range
2.3 - 2.7
0.8 - 2.3
2.3 - 2.7
2.7 - 3.8
GHz
Gain
13
15.5
14
18
13
16
10
13
dB
Gain Variation over Temperature
0.025
0.035
0.025
0.035
0.025
0.035
0.025
0.035
dB/°C
Input Return Loss
11
8
11
13
dB
Output Return Loss
17
13
12
13
dB
Output Power for 1 dB
Compression (P1dB)
12
14
14
17
13.5
16.5
12
15
dBm
Saturated Output Power (Psat)
17
20
19.5
17
dBm
Output Third Order Intercept (IP3)
23
26
27
30
26
29
24
27
dBm
Noise Figure
7
7.5
7
7
dB
Supply Current (Idd)
50
53
53
53
mA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HMC308_08 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz
HMC308_09 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz
HMC308E 功能描述:IC MMIC AMP GP SOT26 RoHS:是 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm(8.2mW) 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA,TDMA,PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測試頻率:2GHz 封裝/外殼:0505(1412 公制) 包裝:帶卷 (TR)
HMC308ETR 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP GP SOT26 制造商:Hittite Microwave Corp 功能描述:HMC308 Series 0.8 - 3.8 GHz General Purpose GaAs MMIC Amplifier - SOT-26-6
HMC309MS8 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC 2.4 GHz FRONT-END LNA / SWITCH