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參數(shù)資料
| 型號(hào)： | HMC258LM3 |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 元件分類： | FPGA |
| 英文描述： | 600000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 砷化鎵微波單片集成電路次諧波貼片混頻器，14 - 20千兆赫 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 203K |
| 代理商： | HMC258LM3 |
MICROWAVE CORPORATION
5 - 38
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
M
5
HMC258
v01.0801
General Description
Features
Functional Diagram
Integrated LO Amplifier: 0dBm Drive
Sub-Harmonically Pumped (x2) LO
High 2LO/RF Isolation: 40 dB
Small Size: 0.8mm x 1.1mm
Electrical Specifications,
T
A
= +25° C, LO Drive = 0 dBm
Typical Applications
The HMC258 is ideal for:
Microwave Pt to Pt Radios
VSAT
SATCOM
The HMC258 chip is a compact sub-harmonically
pumped (x2) single ended MMIC mixer with an
integrated LO amplifier which can be used as an
upconverter or downconverter. The chip utilizes a
GaAs MESFET technology that results in a small
overall chip area of 0.9mm
2
. The 2LO to RF isola-
tion is excellent eliminating the need for additional
filtering. The LO amplifier is a single bias (+5V)
two stage design with only 0dBm drive require-
ment. A less stringent oscillator design is made
possible by the low LO drive and sub-harmonic
nature of the chip. All data is with the chip in a 50
ohm test fixture connected via 0.025mm (1 mil)
diameter wire bonds of minimal length <0.31 mm
(<12 mils).
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 14 - 21 GHz
Parameter
IF = 1 GHz
Vdd = +5.0V
IF = 1 GHz
Vdd = +5.0V
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range, RF
14 - 21
17 - 20
GHz
Frequency Range, LO
7 - 10.5
8.5 - 10
GHz
Frequency Range, IF
DC - 3
DC - 3
GHz
Conversion Loss
10
13.5
9.5
12
dB
Noise Figure (SSB)
10
13.5
9.5
12
dB
2LO to RF Isolation
30
40
34
40
dB
2LO to IF Isolation
30
40 ~ 50
38
40 ~ 50
dB
IP3 (Input)
0
7
0
7
dBm
1 dB Compression (Input)
-5
0
-4
1
dBm
Supply Current (Idd)
50
50
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMC259 | GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 28 - 40 GHz |
| HMC260 | XCV600-4BGG432C - NOT RECOMMENDED for NEW DESIGN |
| HMC261LM1 | SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz |
| HMC262 | GaAs MMIC LOW NOISE AMPLIFIER 15 - 24 GHz |
| HMC263 | GaAs MMIC LOW NOISE AMPLIFIER, 24 - 36 GHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC258LM3_06 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONIC SMT MIXER, 14 - 20 GHz |
| HMC258LM3_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONIC SMT MIXER, 14 - 20 GHz |
| HMC259 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 28 - 40 GHz |
| HMC259_01 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 28 - 40 GHz |
| HMC25DRAH | 功能描述:CONN EDGECARD 50POS R/A .100 SLD RoHS:是 類別:連接器，互連式 >> Card Edge 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 卡類型:非指定 - 雙邊 類型:母頭 Number of Positions/Bay/Row:28 位置數(shù):56 卡厚度:0.062"（1.57mm） 行數(shù):2 間距:0.156"（3.96mm） 特點(diǎn):- 安裝類型:通孔，直角 端子:焊接 觸點(diǎn)材料:磷青銅 觸點(diǎn)表面涂層:金 觸點(diǎn)涂層厚度:30µin（0.76µm） 觸點(diǎn)類型：:全波紋管 顏色:綠 包裝:托盤 法蘭特點(diǎn):側(cè)面安裝開口，無螺紋，0.125"（3.18mm）直徑 材料 - 絕緣體:聚苯硫醚（PPS） 工作溫度:-65°C ~ 125°C 讀數(shù):雙 |
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