參數(shù)資料
型號(hào): HM62W8511HCJP-10
廠商: Renesas Technology Corp.
英文描述: 4M High Speed SRAM (512-kword x 8-bit)
中文描述: 4分高速SRAM(512 - KWord的× 8位)
文件頁(yè)數(shù): 9/13頁(yè)
文件大?。?/td> 63K
代理商: HM62W8511HCJP-10
HM62W8511HI Series
9
Read Timing Waveform (3)
(
WE
= V
IH
,
CS
= V
IL
,
OE
= V
IL
)*
2
Valid data
CS
Dout
High
Impedance
High
Impedance
t
CLZ
t
ACS
t
RC
t
CHZ
Write Timing Waveform (1)
(
WE
Controlled)
Address
WE
*
3
Dout
Din
t
WC
t
WP
t
WR
t
CW
t
DW
t
DH
Valid address
t
AW
Valid data
t
AS
CS
*
3
t
OHZ
*
4
*
4
OE
High impedance*
5
相關(guān)PDF資料
PDF描述
HM62W8511HCJP-12 4M High Speed SRAM (512-kword x 8-bit)
HM62W8511HCLJP-10 BOX 5.0X1.85X1.0 W/CLP BLK
HM62W8511HCLJP-12 BOX 5.0X1.85X1.0 W/CLP GRY
HM62W8511H 4M High Speed SRAM (512-kword ×8-bit)(4M高速靜態(tài)RAM(512k字 ×8位))
HM62W8512BI 4 M SRAM (512-kword×8-bit)(4 M 靜態(tài)RAM(512k字×8位))
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