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參數(shù)資料
| 型號： | HM62W8511HCJP-10 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | 4M High Speed SRAM (512-kword x 8-bit) |
| 中文描述： | 4分高速SRAM（512 - KWord的× 8位） |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 63K |
| 代理商： | HM62W8511HCJP-10 |
HM62W8511HI Series
4M High Speed SRAM (512-kword
×
8-bit)
ADE-203-1036A(Z)
Rev. 1.0
Apr. 15, 1999
Description
The HM62W8511HI is a 4-Mbit high speed static RAM organized 512-kword
×
8-bit. It has realized high
speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed
circuit designing technology. It is most appropriate for the application which requires high speed, high
density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged
in 400-mil 36-pin SOJ.
Features
Single supply : 3.3 V
±
0.3 V
Access time 15 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current : 130 mA (max)
TTL standby current : 50 mA (max)
CMOS standby current : 5 mA (max)
Center V
CC
and V
SS
type pinout
Temperature range: –40 to 85
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM62W8511HCJP-12 | 4M High Speed SRAM (512-kword x 8-bit) |
| HM62W8511HCLJP-10 | BOX 5.0X1.85X1.0 W/CLP BLK |
| HM62W8511HCLJP-12 | BOX 5.0X1.85X1.0 W/CLP GRY |
| HM62W8511H | 4M High Speed SRAM (512-kword ×8-bit)(4M高速靜態(tài)RAM(512k字 ×8位)) |
| HM62W8512BI | 4 M SRAM (512-kword×8-bit)(4 M 靜態(tài)RAM(512k字×8位)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM62W8512BLFP-5 | 制造商:HITACHI 功能描述: |
| HM62W8512BLTTI7 | 制造商:Hitachi 功能描述: |
| HM-630 | 制造商:Black Box Corporation 功能描述:FACE PLATE:HM-STAINLESS |
| HM63021FP | 制造商:Panasonic Industrial Company 功能描述:IC |
| HM63021P-28 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Field/Frame/Line Memory |
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