參數(shù)資料
型號: HM628100LTTI-5SL
廠商: Renesas Technology Corp.
英文描述: Wide Temperature Range Version 8 M SRAM (1024-kword x 8-bit)
中文描述: 寬溫版本八米的SRAM(1024 - KWord的× 8位)
文件頁數(shù): 8/17頁
文件大?。?/td> 91K
代理商: HM628100LTTI-5SL
HM628100I Series
6
DC Characteristics
Parameter
Symbol Min
Typ
*
1
Max
Unit
Test conditions
Input leakage current
|I
LI
|
|I
LO
|
1
μ
A
μ
A
Vin = V
SS
to V
CC
CS1
= V
or CS2 = V
or
OE
= V
IH
or
WE
= V
IL
, or
V
I/O
= V
SS
to V
CC
CS1
= V
, CS2 = V
,
Others = V
IH
/V
IL
, I
I/O
= 0 mA
Min. cycle, duty = 100%,
I
= 0 mA,
CS1
= V
IL
, CS2 = V
IH
,
Others = V
IH
/V
IL
Cycle time = 1
μ
s, duty = 100%,
I
= 0 mA,
CS1
0.2 V,
CS2
V
CC
– 0.2 V
V
IH
V
CC
– 0.2 V, V
IL
0.2 V
CS2 = V
IL
0 V
Vin
(1) 0 V
CS2
0.2 V or
(2)
CS1
V
CC
– 0.2 V,
CS2
V
CC
– 0.2 V
I
OH
= –1 mA
I
OL
= 2.1 mA
Output leakage current
1
Operating current
I
CC
20
mA
Average operating current
I
CC1
14
25
mA
I
CC2
2
4
mA
Standby current
I
SB
I
SB1
0.1
0.3
mA
Standby current
0.8
10
μ
A
Output high voltage
V
OH
V
OL
2.4
V
Output low voltage
Note:
1. Typical values are at V
CC
= 5.0 V, Ta = +25
°
C and not guaranteed.
0.4
V
Capacitance
(Ta = +25
°
C, f = 1.0 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Note
Input capacitance
Cin
8
pF
Vin = 0 V
1
Input/output capacitance
Note:
1. This parameter is sampled and not 100% tested.
C
I/O
10
pF
V
I/O
= 0 V
1
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