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參數(shù)資料
| 型號(hào)： | HM621400H |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4M High Speed SRAM (4-Mword ×1-bit)(4M高速靜態(tài)RAM(4M字×1位)) |
| 中文描述： | 4分高速SRAM（4 Mword × 1位）（4分高速靜態(tài)隨機(jī)存儲(chǔ)器（4分字× 1位）） |
| 文件頁(yè)數(shù)： | 4/15頁(yè) |
| 文件大?。?/td> | 108K |
| 代理商： | HM621400H |
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HM621400H Series
4
Operation Table
CS
OE
WE
Mode
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I
CC
I
CC
Dout
Ref. cycle
H
×
×
Standby
High-Z
—
L
H
H
Output disable
High-Z
—
L
L
H
Read
Dout
Read cycle (1) to (3)
L
H
L
Write
High-Z
Write cycle (1)
L
Note:
L
L
Write
High-Z
Write cycle (2)
×
: H or L
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to V
SS
Voltage on any pin relative to V
SS
Power dissipation
V
CC
V
T
P
T
Topr
–0.5 to +7.0
V
–0.5*
1
to V
CC
+0.5*
2
1.0
V
W
Operating temperature
0 to +70
°
C
°
C
°
C
Storage temperature
Tstg
–55 to +125
Storage temperature under bias
Notes: 1. V
T
(min) = –2.0 V for pulse width (under shoot)
≤
8 ns
2. V
T
(max) = V
CC
+ 2.0 V for pulse width (over shoot)
≤
8 ns
Tbias
–10 to +85
Recommended DC Operating Conditions
(Ta = 0 to +70
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
*
3
V
SS
*
4
V
IH
V
IL
4.5
5.0
5.5
V
0
0
0
V
Input voltage
2.2
—
V
CC
+ 0.5*
2
0.8
V
–0.5*
1
—
V
Notes: 1. V
IL
(min) = –2.0 V for pulse width (under shoot)
≤
8 ns
2. V
IH
(max) = V
CC
+ 2.0 V for pulse width (over shoot)
≤
8 ns
3. The supply voltage with all V
CC
pins must be on the same level.
4. The supply voltage with all V
SS
pins must be on the same level.
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| HM621400HC | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:4M High Speed SRAM (4-Mword x 1-bit) |
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| HM621400HCJP-12 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Instructions for Using SRAM Devices Technical Update/Device |
| HM621400HCLJP-10 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:4M High Speed SRAM (4-Mword x 1-bit) |
| HM621400HCLJP-12 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Instructions for Using SRAM Devices Technical Update/Device |
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