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參數(shù)資料
| 型號： | HM6208HLP-25 |
| 英文描述： | x4 SRAM |
| 中文描述： | x4的SRAM |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 147K |
| 代理商： | HM6208HLP-25 |
HM6207H Series
4
Recommended DC Operating Conditions
(Ta = 0 to +70
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
V
SS
V
IH
V
IL
4.5
5.0
5.5
V
0
0
0
V
Input high (logic 1) voltage
2.2
—
—
6.0
V
Input low (logic 0) voltage
Note: 1. V
IL
min = –2.0 V for pulse width
≤
10 ns.
–0.5
*1
0.8
V
DC Characteristics
(Ta = 0 to +70
°
C, V
CC
= 5 V
±10%, V
SS
= 0 V)
HM6207H-25
HM6207H-35/45
Parameter
Symbol Min
Typ
*1
Max Min Typ
*1
Max Unit Test Conditions
Input leakage current
I
LI
—
—
2.0 —
—
2.0
μA
V
= Max,
Vin
= V
SS
to V
CC
&6
= V
IH
,
V
I/O
= V
SS
to V
CC
&6
= V
, I
= 0 mA,
min cycle, duty = 100%
&6
= V
, l
= 0 mA,
t cycle = 50 ns,
duty = 100%
&6
= V
IH
, min cycle
&6
≥
V
– 0.2 V,
0 V
≤
Vin < 0.2, or
Vin
≥
V
CC
– 0.2 V
Output leakage current
I
LO
—
—
10.0 —
—
10.0 μA
Operating power supply
current
l
CC
—
60
120 —
50
100 mA
I
CC1
—
40
80
—
40
80
mA
Standby power supply current I
SB
Standby power supply
current (1)
—
20
40
—
15
30
mA
I
SB1
—
0.02 2.0 —
0.02 2.0
mA
L-
Version
—
0.006 0.1 —
0.006 0.1
Output low voltage
V
OL
V
OH
—
—
0.4 —
—
0.4
V
I
OL
= 8 mA
I
OH
= –4.0 mA
Output high voltage
Note: 1. Typical values are at V
CC
= 5.0 V, Ta = +25
°
C and not guaranteed.
2.4
—
—
2.4
—
—
V
Capacitance
(Ta = 25
°
C, f = 1 MHz)
*1
Parameter
Symbol
Min
Max
Unit
Test Conditions
Input capacitance
Cin
—
6
pF
Vin = 0 V
Output capacitance
Note: 1. This parameter is sampled and is not 100% tested.
Cout
—
10
pF
Vout = 0 V
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| HM6208HLP-45 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:65,536-word ⅴ 4-bit High Speed CMOS Static RAM |
| HM6208HP-25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SRAM |
| HM6208HP-35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SRAM |
| HM6208HP-45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SRAM |
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