參數(shù)資料
型號： HM5225805BLTT-B6
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
中文描述： 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝： 0.400 INCH, PLASTIC, TSOP2-54
文件頁數(shù)： 27/63頁
文件大?。?/td> 462K
代理商： HM5225805BLTT-B6
HM5225165B/HM5225805B/HM5225405B-75/A6/B6
Data Sheet E0082H10
27
Command Intervals
Read command to Read command interval:
1. Same bank, same ROW address:
When another read command is executed at the same ROW address
of the same bank as the preceding read command execution, the second read can be performed after an
interval of no less than 1 clock. Even when the first command is a burst read that is not yet finished, the data
read by the second command will be valid.
READ to READ Command Interval
(same ROW address in same bank)
CLK
Command
Dout
out B3
Address
out B1 out B2
BS
ACTV
Row
Column A
READ
READ
Column B
out A0 out B0
Bank0
Active
Column =A
Read
Column =B
Read
Column =A
Dout
Column =B
Dout
CAS
Latency = 3
Burst Length = 4
Bank 0
2. Same bank, different ROW address:
When the ROW address changes on same bank, consecutive read
commands cannot be executed; it is necessary to separate the two read commands with a precharge command
and a bank-active command.
3. Different bank:
When the bank changes, the second read can be performed after an interval of no less
than 1 clock, provided that the other bank is in the bank-active state. Even when the first command is a burst
read that is not yet finished, the data read by the second command will be valid.
READ to READ Command Interval
(different bank)
CLK
Command
Dout
out B3
Address
out B1 out B2
BS
ACTV
Row 0
Row 1
ACTV
READ
Column A
out A0 out B0
Bank0
Active
Bank3
Active
Bank0
Read
Bank3
Read
READ
Column B
Bank0
Dout
Bank3
Dout
CAS
Latency = 3
Burst Length = 4
相關(guān)PDF資料
PDF描述
HM5225405BTT-B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5225405BLTT-B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5225805BTT-75 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5225405BTT-75 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5225165BTT-A6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HM5225805BTT-75 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5225805BTT-A6 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5225805BTT-B6 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM-523841-1.5-8A 功能描述:電線鑒定 HM 2.06/3.31" LABEL PRICE PER LABEL RoHS:否 制造商:TE Connectivity / Q-Cees 產(chǎn)品:Labels and Signs 類型: 材料:Vinyl 顏色:Blue 寬度:0.625 in 長度:1 in
HM5241605 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Series 131 072-Word x 16-Bit x 2-Bank Synchronous Dynamic RAM
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