參數資料
型號: HM51W16165LTT-5
廠商: Hitachi,Ltd.
英文描述: 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh
中文描述: 16米EDO公司的DRAM(1 - Mword 16位)4畝刷新/ 1畝刷新
文件頁數: 14/36頁
文件大?。?/td> 461K
代理商: HM51W16165LTT-5
HM51W16165 Series, HM51W18165 Series
14
EDO Page Mode Cycle
HM51W16165/HM51W18165
-5
-6
-7
Parameter
Symbol
Min Max
Min Max
Min Max
Unit
Notes
EDO page mode cycle time
EDO page mode
RAS
pulse width
Access time from
CAS
precharge
RAS
hold time from
CAS
precharge t
CPRH
Output data hold time from
CAS
low t
DOH
CAS
hold time referred
OE
CAS
to
OE
setup time
t
HPC
t
RASP
t
CPA
20
25
30
ns
25
100000 —
100000 —
100000 ns
16
30
35
40
ns
9, 17, 22
30
35
40
ns
3
3
3
ns
9
t
COL
t
COP
t
RCHC
8
10
13
ns
5
5
5
ns
Read command hold time from
CAS
precharge
30
35
40
ns
EDO Page Mode Read-Modify-Write Cycle
HM51W16165/HM51W18165
-5
-6
-7
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
EDO page mode read-modify-write
cycle time
WE
delay time from
CAS
precharge t
CPW
t
HPRWC
57
68
79
ns
45
54
62
ns
14, 22
Refresh (HM51W16165 Series)
Parameter
Symbol
Max
Unit
Note
Refresh period
t
REF
t
REF
64
ms
4096 cycles
Refresh period (L-version)
128
ms
4096 cycles
Refresh (HM51W18165 Series)
Parameter
Symbol
Max
Unit
Note
Refresh period
t
REF
t
REF
16
ms
1024 cycles
Refresh period (L-version)
128
ms
1024 cycles
This Material Copyrighted By Its Respective Manufacturer
相關PDF資料
PDF描述
HM51W18165LTT-5 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh
HM51W16165 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh
HM51W16165J-5 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh
HM51W16165LTT-6 x16 EDO Page Mode DRAM
HM51W16165LTT-7 Plastic internal molding, Noise prevention, Small and lightweight interface; HRS No: 112-3433-2 00; Contact Mating Area Plating: Tin
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