參數(shù)資料
型號: HM5164165FLJ-6
廠商: Hitachi,Ltd.
英文描述: 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
中文描述: 6400 EDO公司的DRAM(4 Mword x 16位)8K的refresh/4k刷新
文件頁數(shù): 12/37頁
文件大?。?/td> 510K
代理商: HM5164165FLJ-6
HM5164165F Series, HM5165165F Series
12
AC Characteristics
(Ta = 0 to +70
°
C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V)*
1,
*
2,
*
19,
*
26
Test Conditions
Input rise and fall time: 2 ns
Input pulse levels: V
IL
= 0 V, V
IH
= 3.0 V
Input timing reference levels: 0.8 V, 2.0 V
Output timing reference levels: 0.8 V, 2.0 V
Output load: 1 TTL gate + C
L
(100 pF) (Including scope and jig)
Read, Write, Read-Modify-Write and Refresh Cycles
(Common parameters)
HM5164165F/HM5165165F
-5
-6
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Random read or write cycle time
RAS
precharge time
CAS
precharge time
RAS
pulse width
CAS
pulse width
t
RC
t
RP
t
CP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
OED
t
DZO
t
DZC
t
T
84
104
ns
30
40
ns
8
10
ns
30
50
10000
60
10000
ns
8
10000
10
10000
ns
Row address setup time
0
0
ns
Row address hold time
8
10
ns
Column address setup time
0
0
ns
27
Column address hold time
RAS
to
CAS
delay time
RAS
to column address delay time
RAS
hold time
CAS
hold time
CAS
to
RAS
precharge time
OE
to Din delay time
OE
delay time from Din
CAS
delay time from Din
8
10
ns
27
12
37
14
45
ns
3
10
25
12
30
ns
4
13
15
ns
35
40
ns
5
5
ns
28
13
15
ns
5
0
0
ns
6
0
0
ns
6
Transition time (rise and fall)
2
50
2
50
ns
7
相關(guān)PDF資料
PDF描述
HM5164165FTT-5 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
HM5165165FTT-5 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
HM5164165FTT-6 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
HM5165165FTT-6 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
HM5165165FJ-5 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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