參數(shù)資料
型號(hào): HM514400CL
廠商: Hitachi,Ltd.
英文描述: 1,048,576-word X 4-bit Dynamic Random Access Memory
中文描述: 1,048,576字× 4位動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器
文件頁數(shù): 10/27頁
文件大?。?/td> 235K
代理商: HM514400CL
Read Cycle
HM514400B/BL, HM514400C/CL
-6
-7
-8
Parameter
Access time from
RAS
Access time from
CAS
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
t
RAC
t
CAC
60
70
80
ns
2, 3, 17
15
20
20
ns
3, 4, 13,
17
Access time from address
t
AA
30
35
40
ns
3, 5, 13,
17
Access time from
OE
t
OAC
t
RCS
t
RCH
t
RRH
t
RAL
t
OFF1
t
OFF2
t
CDD
t
OEP
15
20
20
ns
3, 17
Read command setup time
Read command hold time to
CAS
Read command hold time to
RAS
Column address to
RAS
lead time
0
0
0
ns
0
0
0
ns
18
0
0
0
ns
18
30
35
40
ns
Output buffer turn-off time
Output buffer turn-off time to
OE
CAS
to Din delay time
OE
pulse width
0
15
0
20
0
20
ns
6
0
15
0
20
0
20
ns
6
15
20
20
ns
15
20
20
ns
Write Cycle
HM514400B/BL, HM514400C/CL
-6
-7
-8
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
Write command setup time
t
WCS
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
0
0
0
ns
10
Write command hold time
15
15
15
ns
Write command pulse width
Write command to
RAS
lead time
Write command to
CAS
lead time
10
10
10
ns
15
20
20
ns
15
20
20
ns
Data-in setup time
0
0
0
ns
11
Data-in hold time
15
15
15
ns
11
10
HM514400B/BL, HM514400C/CL Series
相關(guān)PDF資料
PDF描述
HM5164165F 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
HM5164165FJ-5 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
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HM5164165FLJ-5 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
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相關(guān)代理商/技術(shù)參數(shù)
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