參數(shù)資料
型號: HIP6602BCRZ
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: FPGA 1600000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN
中文描述: 0.73 A 2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PQCC16
封裝: 5 X 5 MM, GREEN, PLASTIC, MO-220VHHB, QFN-16
文件頁數(shù): 9/12頁
文件大?。?/td> 319K
代理商: HIP6602BCRZ
9
FN9076.5
July 22, 2005
Typical Performance Curves
FIGURE 2. POWER DISSIPATION vs FREQUENCY
FIGURE 3. 1nF LOADING PROFILE
FIGURE 4. 3nF LOADING PROFILE
FIGURE 5. POWER DISSIPATION vs LOADING
FIGURE 6. POWER DISSIPATION vs FREQUENCY, PVCC = 5V
FIGURE 7. POWER DISSIPATION vs FREQUENCY, PVCC = 5V
1200
1000
800
600
400
200
0
0
500
1000
1500
FREQUENCY (kHz)
P
PVCC = 12V
VCC = 12V
C
U
= C
L
= 2nF
C
U
= C
L
= 1nF
C
U
= C
L
= 3nF
C
U
= C
L
= 4nF
C
U
= C
L
= 5nF
1200
800
600
400
200
0
0
500
1000
2000
FREQUENCY (kHz)
P
1500
PVCC = VCC = 12V
1000
C
U
= C
L
= 1nF
C
L
= 1nF, C
U
= 0nF
C
U
= 1nF, C
L
= 0nF
1200
800
600
400
200
0
0
500
1000
FREQUENCY (kHz)
P
1500
PVCC = VCC = 12V
1000
C
U
= C
L
= 3nF
C
L
= 3nF, C
U
= 0nF
C
U
= 3nF, C
L
= 0nF
10kHz
30kHz
100kHz
200kHz
500kHz
1
2
3
4
5
1200
1000
800
600
400
200
0
P
GATE CAPACITANCE (C
U
= C
L
), (nF)
PVCC = VCC = 12V
PVCC = 5V, VCC = 12V
C
U
= C
L
= 4nF
C
U
= C
L
= 5nF
C
U
= C
L
= 2nF
C
U
= C
L
=1nF
800
700
500
600
300
100
0
0
500
1500
2000
FREQUENCY (kHz)
P
1000
200
400
C
U
= C
L
= 3nF
0
500
1000
1500
2000
FREQUENCY (kHz)
350
300
250
200
150
100
50
0
P
PVCC = 5V, VCC = 12V
C
L
= 1nF, C
U
= 0nF
C
U
= C
L
= 1nF
C
U
= 1nF, C
L
= 0nF
HIP6602B
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HIP6602BCRZA 功能描述:功率驅(qū)動器IC W/ANNEAL DL CH SYNCH CT BUCK MOSF DRVR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
HIP6602BCRZA-T 功能描述:功率驅(qū)動器IC W/ANL DL CH SYNCHCT BUCK MOSF DRVR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
HIP6602BCRZ-T 功能描述:功率驅(qū)動器IC DL CH SYNCHCT BUCK MOSF DRVR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
HIP6602CB 制造商:Rochester Electronics LLC 功能描述:- Bulk
HIP6602CB-T 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel