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參數(shù)資料
| 型號(hào)： | HIP6602BCBZ |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual Channel Synchronous Rectified Buck MOSFET Driver |
| 中文描述： | 0.73 A 2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PDSO14 |
| 封裝： | GREEN, PLASTIC, MS-012AB, SOIC-14 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 319K |
| 代理商： | HIP6602BCBZ |
1
HIP6602B
Dual Channel Synchronous Rectified
Buck MOSFET Driver
The HIP6602B is a high frequency, two power channel
MOSFET driver specifically designed to drive four power
N-Channel MOSFETs in a synchronous rectified buck
converter topology. This device is available in either a
14-lead SOIC or a 16-lead QFN package with a PAD to
thermally enhance the package. These drivers combined
with a HIP63xx or ISL65xx series of Multi-Phase Buck PWM
controllers and MOSFETs form a complete core voltage
regulator solution for advanced microprocessors.
The HIP6602B drives both upper and lower gates over a
range of 5V to 12V. This drive-voltage flexibility provides the
advantage of optimizing applications involving trade-offs
between switching losses and conduction losses.
The output drivers in the HIP6602B have the capacity to
efficiently switch power MOSFETs at high frequencies. Each
driver is capable of driving a 3000pF load with a 30ns
propagation delay and 50ns transition time. This device
implements bootstrapping on the upper gates with a single
external capacitor and resistor required for each power
channel. This reduces implementation complexity and allows
the use of higher performance, cost effective, N-Channel
MOSFETs. Adaptive shoot-through protection is integrated
to prevent both MOSFETs from conducting simultaneously.
Ordering Information
Features
Drives Four N-Channel MOSFETs
Adaptive Shoot-Through Protection
Internal Bootstrap Devices
Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 30ns
Small 14-Lead SOIC Package
Smaller 16-Lead QFN Thermally Enhanced Package
5V to 12V Gate-Drive Voltages for Optimal Efficiency
Three-State Input for Bridge Shutdown
Supply Undervoltage Protection
Pb-Free Plus Anneal Available (RoHS Compliant)
QFN Package:
- Compliant to JEDEC PUB95 MO-220
QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package footprint, which improves
PCB efficiency and has a thinner profile
Applications
Core Voltage Supplies for Intel Pentium III
and AMD
Athlon
TM
Microprocessors.
High-Frequency, Low-Profile DC/DC Converters
High-Current, Low-Voltage DC/DC Converters
PART NUMBER
TEMP.
RANGE (°C)
PACKAGE
PKG.
DWG. #
HIP6602BCB
0 to 85
14 Ld SOIC
M14.15
HIP6602BCB-T
14 Ld SOIC Tape and Reel
HIP6602BCBZ (Note 1)
0 to 85
14 Ld SOIC
(Pb-Free)
M14.15
HIP6602BCBZ-T (Note 1)
14 Ld SOIC Tape and Reel (Pb-Free)
HIP6602BCR
0 to 85
16 Ld 5x5 QFN
L16.5x5
HIP6602BCR-T
16 Ld 5x5 QFN Tape and Reel
HIP6602BCRZ (Note 1)
0 to 85
16 Ld 5x5 QFN
(Pb-Free)
L16.5x5
HIP6602BCRZ-T (Note 1)
16 Ld 5x5 QFN Tape and Reel (Pb-Free)
HIP6602BCRZA (Note 1)
0 to 85
16 Ld 5x5 QFN
(Pb-Free)
L16.5x5
HIP6602BCRZA-T (Note 1) 16 Ld 5x5 QFN Tape and Reel (Pb-Free)
NOTE:
1. Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations.
Intersil Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
Data Sheet
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2002-2005. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
FN9076.5
July 22, 2005
NOT RECOMMENDED FOR NEW DESIGNS
INTERSIL RECOMMENDS:
ISL6612, IISL6614, ISL6614A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HIP6602BCBZ-T | 功能描述:功率驅(qū)動(dòng)器IC LD VER OF HI6602BCB- RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| HIP6602BCR | 功能描述:IC DRVR MOSF 2CH SYC BUCK 16-QFN RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| HIP6602BCR-T | 功能描述:IC DRVR MOSF 2CH SYC BUCK 16-QFN RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| HIP6602BCRZ | 功能描述:功率驅(qū)動(dòng)器IC DL CH SYNCHCT BUCK MOSF DRVR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| HIP6602BCRZA | 功能描述:功率驅(qū)動(dòng)器IC W/ANNEAL DL CH SYNCH CT BUCK MOSF DRVR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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