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參數(shù)資料
| 型號： | HIP6602BCBZ |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual Channel Synchronous Rectified Buck MOSFET Driver |
| 中文描述： | 0.73 A 2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PDSO14 |
| 封裝： | GREEN, PLASTIC, MS-012AB, SOIC-14 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 319K |
| 代理商： | HIP6602BCBZ |
5
FN9076.5
July 22, 2005
Absolute Maximum Ratings
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (V
BOOT
- V
PHASE
) . . . . . . . . . . . . . . . . . . . . . . .15V
Input Voltage (V
PWM
) . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to 7V
UGATE. . . . . . .V
PHASE
- 5V(<400ns pulse width) to V
BOOT
+ 0.3V
V
PHASE
-0.3V(>400ns pulse width) to V
BOOT
+ 0.3V
LGATE. . . . . . . . . GND - 5V(<400ns pulse width) to V
PVCC
+ 0.3V
GND -0.3V(>400ns pulse width) to V
PVCC
+ 0.3V
PHASE. . . . . . . . . . . . . . . . . . GND -5V(<400ns pulse width) to 15V
GND -0.3V(>400ns pulse width) to 15V
ESD Rating
Human Body Model (Per MIL-STD-883 Method 3015.7). . . . .3kV
Machine Model (Per EIAJ ED-4701 Method C-111) . . . . . . .200V
Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . 0°C to 85°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . .125°C
Supply Voltage, VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
±
10%
Supply Voltage Range PVCC . . . . . . . . . . . . . . . . . . . . . 5V to 12V
Thermal Information
Thermal Resistance
SOIC Package (Note 2) . . . . . . . . . . . .
QFN Package (Note 3). . . . . . . . . . . . .
Maximum Junction Temperature (Plastic Package) . . . . . . . .150°C
Maximum Storage Temperature Range . . . . . . . . . .-65°C to 150°C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . .300°C
(SOIC - Lead Tips Only)
For Recommended soldering conditions see Tech Brief TB389.
θ
JA
(°C/W)
68
36
θ
JC
(°C/W)
N/A
6
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
2.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
3.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
θ
JC,
the
“case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379.
Electrical Specifications
Recommended Operating Conditions, unless otherwise specified.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VCC SUPPLY CURRENT
Bias Supply Current
I
VCC
I
PVCC
f
PWM
= 500kHz, V
PVCC
= 12V
f
PWM
= 500kHz, V
PVCC
= 12V
-
3.7
5.0
mA
Power Supply Current
-
2.0
4.0
mA
POWER-ON RESET
VCC Rising Threshold
9.7
9.95
10.4
V
VCC Falling Threshold
7.3
7.6
8.0
V
PWM INPUT
Input Current
I
PWM
V
PWM
= 0 or 5V (See Block Diagram)
V
PVCC
= 12V
V
PVCC
= 12V
V
PVCC
= V
VCC
= 12V, 3nF Load
V
PVCC
= V
VCC
= 12V, 3nF Load
V
PVCC
= V
VCC
= 12V, 3nF Load
V
PVCC
= V
VCC
= 12V, 3nF Load
V
PVCC
= V
VCC
= 12V, 3nF Load
V
PVCC
= V
VCC
= 12V, 3nF Load
-
500
-
μA
PWM Rising Threshold
-
3.6
-
V
PWM Falling Threshold
-
1.45
-
V
UGATE Rise Time
TR
UGATE
TR
LGATE
TF
UGATE
TF
LGATE
TPDL
UGATE
TPDL
LGATE
-
20
-
ns
LGATE Rise Time
-
50
-
ns
UGATE Fall Time
-
20
-
ns
LGATE Fall Time
-
20
-
ns
UGATE Turn-Off Propagation Delay
-
30
-
ns
LGATE Turn-Off Propagation Delay
-
20
-
ns
Shutdown Window
1.4
-
3.6
V
Shutdown Holdoff Time
-
230
-
ns
OUTPUT
Upper Drive Source Impedance
R
UGATE
V
VCC
= 12V, V
PVCC
= 5V
V
VCC
= V
PVCC
= 12V
V
VCC
= 12V, V
PVCC
= 5V
V
VCC
= V
PVCC
= 12V
V
VCC
= 12V, V
PVCC
= 5V
V
VCC
= V
PVCC
= 12V
V
VCC
= 12V, V
PVCC
= 5V or 12V
-
1.7
3.0
-
3.0
5.0
Upper Drive Sink Impedance
R
UGATE
-
2.3
4.0
-
1.1
2.0
Lower Drive Source Current
I
LGATE
400
580
-
mA
500
730
-
mA
Lower Drive Sink Impedance
R
LGATE
-
1.6
4.0
HIP6602B
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| HIP6602BCBZ-T | 功能描述:功率驅(qū)動器IC LD VER OF HI6602BCB- RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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| HIP6602BCR-T | 功能描述:IC DRVR MOSF 2CH SYC BUCK 16-QFN RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應商設備封裝:TO-263 包裝:管件 |
| HIP6602BCRZ | 功能描述:功率驅(qū)動器IC DL CH SYNCHCT BUCK MOSF DRVR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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