參數(shù)資料
型號(hào): HIP6005CB
廠商: HARRIS SEMICONDUCTOR
元件分類: 穩(wěn)壓器
英文描述: Buck Pulse-Width Modulator (PWM) Controller and Output Voltage Monitor
中文描述: SWITCHING CONTROLLER, 200 kHz SWITCHING FREQ-MAX, PDSO20
文件頁數(shù): 10/12頁
文件大?。?/td> 203K
代理商: HIP6005CB
10
temperature by calculating the temperature rise according
to package thermal-resistance specifications. A separate
heatsink may be necessary depending upon MOSFET
power, package type, ambient temperature and air flow.
Standard-gate MOSFETs are normally recommended for
use with the HIP6005. However, logic-level gate MOSFETs
can be used under special circumstances. The input voltage,
upper gate drive level, and the MOSFETs absolute
gate-to-source voltage rating determine whether logic-level
MOSFETs are appropriate.
Figure 10 shows the upper gate drive (BOOT pin) supplied
by a bootstrap circuit from V
CC
. The boot capacitor, C
BOOT
,
develops a floating supply voltage referenced to the PHASE
pin. This supply is refreshed each cycle to a voltage of V
CC
less the boot diode drop (V
D
) when the schottky diode, D2,
conducts. Logic-level MOSFETs can only be used if the
MOSFETs absolute gate-to-source voltage rating exceeds
the maximum voltage applied to V
CC
.
Figure 11 shows the upper gate drive supplied by a direct
connection to V
CC
. This option should only be used in
converter systems where the main input voltage is +5V
DC
or less. The peak upper gate-to-source voltage is
approximately V
CC
less the input supply. For +5V main
power and +12VDC for the bias, the gate-to-source voltage
of Q1 is 7V. A logic-level MOSFET is a good choice for Q1
under these conditions.
Schottky Selection
Rectifier D2 conducts when the upper MOSFET Q1 is off. The
diode should be a Schottky type for low power losses. The
power dissipation in the schottky rectifier is approximated by:
In addition to power dissipation, package selection and
heatsink requirements are the main design trade-offs in
choosing the schottky rectifier. Since the three factors are
interrelated, the selection process is an iterative procedure.
The maximum junction temperature of the rectifier must
remain below the manufacturer’s specified value, typically
125
o
C. By using the package thermal resistance specification
and the schottky power dissipation equation (shown above),
the junction temperature of the rectifier can be estimated. Be
sure to use the available airflow and ambient temperature to
determine the junction temperature rise.
P
COND
= I
O2
r
DS(ON)
D
P
SW
= 1/2 I
O
V
IN
t
SW
F
S
Where: D is the duty cycle = V
OUT
/ V
IN
,
t
SW
is the switching interval, and
F
S
is the switching frequency.
+12V
HIP6005
GND
UGATE
PHASE
BOOT
VCC
+5V OR +12
NOTE: V
G-S
V
CC
- V
D
.
FIGURE 10. UPPER GATE DRIVE - BOOTSTRAP OPTION
(NOTE)
C
BOOT
D
BOOT
Q1
D2
+
-
+ V
D
-
+12V
HIP6005
GND
UGATE
PHASE
BOOT
V
CC
+5V OR LESS
Q1
+
-
IGURE 11. UPPER GATE DRIVE - DIRECT V
CC
DRIVE OPTION
D2
NOTE:
V
G-S
V
CC
-5V
P
COND
= I
0
x V
f
x (1 - D)
Where: D is the duty cycle = V
OUT
/ V
IN
, and
V
f
is the Schottky forward voltage drop
HIP6005
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