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參數(shù)資料
| 型號： | HGTP7N60A4D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | V7 Series Miniature Basic Switch, Single Pole Double Throw Circuitry, 5 A at 250 Vac, Straight Lever Actuator, 0,45 N [1.6 oz] Maximum Operating Force, Silver Contacts, Quick Connect Termination |
| 中文描述： | 34 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 134K |
| 代理商： | HGTP7N60A4D |
2-6
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
0
20
40
60
80
100
0
0.2
0.6
0.8
1.4
0.4
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
1.2
1.0
V
GE
, GATE TO EMITTER VOLTAGE (V)
9
1.8
10
12
2.0
2.4
2.2
11
13
14
15
16
2.6
2.8
V
C
,
I
CE
= 14A
I
CE
= 7A
I
CE
= 3.5A
DUTY CYCLE < 0.5%, T
J
= 25
o
C
PULSE DURATION = 250
μ
s
1
2
3
5
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
4
0
10
15
20
25
25
o
C
125
o
C
5
35
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%,
30
60
40
20
0
t
r
,
I
EC
, FORWARD CURRENT (A)
0
80
2
8
12
14
dI
EC
/dt = 200A/
μ
s
125
o
C t
rr
25
o
C t
b
25
o
C t
a
25
o
C t
rr
100
10
125
o
C t
b
125
o
C t
a
6
4
200
300
400
600
700
t
r
,
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
100
500
10
50
20
30
40
60
I
EC
= 7A, V
CE
= 390V
125
o
C t
b
25
o
C t
a
25
o
C t
b
125
o
C t
a
300
200
100
0
100
Q
r
,
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
400
200
300
400
500
600
700
125
o
C, I
EC
= 7A
125
o
C, I
EC
= 3.5A
25
o
C, I
EC
= 3.5A
25
o
C, I
EC
= 7A
V
CE
= 390V
500
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP7N60A4NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTP7N60B3 | 制造商:Harris Corporation 功能描述: |
| HGTP7N60B3D | 功能描述:IGBT 晶體管 PWR IGBT 14A 600V N-CHANNEL RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP7N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP7N60C3D | 功能描述:IGBT 晶體管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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