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參數(shù)資料
| 型號(hào)： | HGTP7N60B3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 72 MACROCELL 3.3 VOLT ISP CPLD |
| 中文描述： | 14 A, 600 V, N-CHANNEL IGBT |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 168K |
| 代理商： | HGTP7N60B3 |
2-1
TM
File Number
4826.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
SABER is a trademark of Analogy, Inc.
1-888-INTERSIL or 321-724-7143
Intersil and Design is a trademark of Intersil Corporation.
Copyright
Intersil Corporation 2000
HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4,
HGTP7N60A4
600V, SMPS Series N-Channel IGBT
The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and
HGTP7N60A4 are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49331.
Features
>100kHz Operation at 390V, 7A
200kHz Operation at 390V, 5A
600V Switching SOA Capability
Typical Fall Time
. . . . . . . . . . . . . . . . . . . .75
ns at T
J
= 125
o
C
Low Conduction Loss
Temperature Compensating
SABER Model
www.intersil.com
Symbol
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD7N60A4S
TO-252AA
7N60A4
HGT1S7N60A4S
TO-263AB
7N60A4
HGTG7N60A4
TO-247
7N60A4
HGTP7N60A4
TO-220AB
7N60A4
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA and TO-263AB variant in tape and reel,
e.g., HGTD7N60A4S9A.
C
E
G
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-252AA
JEDEC TO-263AB
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,598,461
4,605,948
4,620,211
4,631,564
4,682,195
4,684,413
4,694,313
4,717,679
4,803,533
4,809,045
4,809,047
4,810,665
4,888,627
4,890,143
4,901,127
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
COLLECTOR
(FLANGE)
C
E
G
COLLECTOR
(FLANGE)
G
EC
G
E
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
G
E
Data Sheet
June 2000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTP7N60C3 | 3.3V 72-mc CPLD |
| HGTD7N60A4S | 600V, SMPS Series N-Channel IGBT |
| HGTG7N60A4 | 600V, SMPS Series N-Channel IGBT |
| HGTP7N60A4 | 600V, SMPS Series N-Channel IGBT |
| HGTP7N60C3 | 3.3V 72-mc CPLD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP7N60B3D | 功能描述:IGBT 晶體管 PWR IGBT 14A 600V N-CHANNEL RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP7N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP7N60C3D | 功能描述:IGBT 晶體管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTP7N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 600V 14A TO-220 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, 600V, 14A, TO-220 |
| HGTP7N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
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