型號: | HGTP3N60C3D |
廠商: | Harris Corporation |
英文描述: | 3.3V 72-mc CPLD |
中文描述: | 第6A,600V的,的ufs系列N溝道IGBT的與反平行Hyperfast二極管 |
文件頁數(shù): | 6/7頁 |
文件大?。?/td> | 327K |
代理商: | HGTP3N60C3D |
相關(guān)PDF資料 |
PDF描述 |
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HGTD3N60C3 | 6A, 600V, UFS Series N-Channel IGBTs |
HGTD3N60C3S | 6A, 600V, UFS Series N-Channel IGBTs |
HGTD3N60A4 | 600V, SMPS Series N-Channel IGBT |
HGTD3N60A4S | OSCILLATORS 100PPM 0+70 3.3V 4 4.000MHZ TS HCMOS 5X7MM 4PAD SMD |
HGTG12N60C3D | 36 MACROCELL 3.3 VOLT ISP CPLD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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HGTP3N60C3D_07 | 制造商:HARRIS 制造商全稱:HARRIS 功能描述:6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
HGTP5N120 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
HGTP5N120BN | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:21A, 1200V, NPT Series N-Channel IGBTs |
HGTP5N120BND | 功能描述:IGBT 晶體管 21a 1200V IGBT NPT Series N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
HGTP5N120CN | 制造商:Rochester Electronics LLC 功能描述:- Bulk |